2SD371

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD371 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·High Power Dissipation: PC= 50W(Max)@TC=25℃ ·Complement to Type 2SB531 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IE Emitter Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature -6 A PC 50 W ℃ TJ 150 Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 0.1A; IB= 0 IE= 10mA; IC= 0 IC= 4A; IB= 0.4A B 2SD371 MIN 80 5 TYP. MAX UNIT V V 2.5 1.5 0.1 0.1 40 20 100 8 240 V V mA mA IC= 4A; VCE= 5V VCB= 50V; IE= 0 VEB= 5V; IC= 0 IC= 1A; VCE= 5V IC= 4A; VCE= 5V IE= 0; VCB= 10V; f= 1MHz IC= 1A; VCE= 5V pF MHz hFE-1 Classifications R 40-80 O 70-140 Y 120-240 isc Website：www.iscsemi.cn