BD142

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD142 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High dissipation rating APPLICATIONS ・LF large signal power amplification ・Intended for a wide variety of intermediate power applications. ・Suited for use in audio and inverter circuits at 12V PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 45 45 7 15 7 117 -65~200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD142 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICEX IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=200mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A ;IB=0.4A IC=4A;VCE=4V VCE=100V;VBE=-1.5V VEB=7V; IC=0 IC=4A ; VCE=4V IC=0.5A ; VCE=4V 12.5 20 MIN 45 45 7 1.1 1.5 2 1 160 TYP. MAX UNIT V V V V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD142 Fig.2 Outline dimensions 3