BD250

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C DESCRIPTION ・With TO-3PN package ・Complement to type BD249/A/B/C ・125 W at 25°C case temperature ・25 A continuous collector current PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER BD246 BD246A VCBO Collector-base voltage BD246B BD246C BD246 BD246A VCEO Collector-emitter voltage BD246B BD246C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -100 -5 -25 -40 -5 125 -65~150 -65~150 V A A A W ℃ ℃ Collector emitter -90 -115 -45 -60 V CONDITIONS VALUE -55 -70 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD250 BD250A IC=-30mA ;IB=0 BD250B BD250C VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD250/250A BD250B/250C IC=-15A ;IB=-1.5A IC=-25A ;IB=-5A IC=-15A ; VCE=-4V IC=-25A ; VCE=-4V VCE=-30V IB=0 -1.0 VCE=-60V IB=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-25A ; VCE=-4V 25 10 5 -1.0 mA mA -80 -100 -1.8 -4.0 -1.6 -3.0 V V V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage ICEO Collector cut-off current IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC current gain Switching times ton toff Turn-on time Turn-off time IC=-5A; IB1=-IB2=-0.5A RL=5Ω 0.2 0.4 μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD250/A/B/C Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3