BDW23

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDW23 BDW23A BDW23B BDW23C BDW23 BDW23A BDW23B BDW23C VEBO IC ICM IB B VALUE 45 60 UNIT VCER Collector-Emitter Voltage V 80 100 45 60 V 80 100 5 6 8 0.2 50 150 -65~150 V A A A W ℃ ℃ VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW23 BDW23A IC= 100mA ;IB=0 BDW23B BDW23C VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on)-1 VBE(on)-2 VECF Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage C-E Diode Forward Voltage BDW23 BDW23A BDW23B BDW23C BDW23 BDW23A BDW23B BDW23C IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain IC= 2A; IB= 8mA B BDW23/A/B/C CONDITIONS MIN 45 60 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V 80 100 2 3 2.5 2.5 3 1.8 V V V V V V IC= 6A; IB= 60mA B IC= 2A; IB= 8mA B IC= 1A ; VCE= 3V IC= 6A ; VCE= 3V IF= 2A VCE= 22V; IB= 0 B ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 0.5 VCE= 40V; IB= 0 B mA VCE= 50V; IB= 0 B VCB= 45V;IE= 0 VCB= 60V;IE= 0 0.2 VCB= 80V;IE= 0 VCB= 100V;IE= 0 VEB= 5V; IC=0 IC= 1A ; VCE= 3V IC= 2A ; VCE= 3V IC= 6A ; VCE= 3V 1000 750 100 20000 2 mA mA ICBO Collector Cutoff Current isc Website：www.iscsemi.cn 2