BDW41

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW41 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 80V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A ·Complement to Type BDW46 APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 80 80 5 15 0.5 85 150 -55~150 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.47 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BDW41 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 80 V VCE(sat)-1 VCE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V Collector-Emitter Saturation Voltage IC= 10A; IB= 50mA 3.0 V Base-Emitter On Voltage IC= 10A; VCE= 4V 3.0 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 B 2.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 5A; VCE= 4V 1000 hFE-2 fT DC Current Gain IC= 10A; VCE= 4V 250 Current-Gain—Bandwidth Product IC= 3A; VCE= 3V; ftest= 1MHz IE= 0; VCB= 10V; ftest= 0.1MHz 4 MHz COB Output Capacitance 200 pF isc Website：www.iscsemi.cn 2