INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2508D
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
VALUE 1500 700 7.5 8 15 4 6 125 150 -65~150
UNIT V V V A A A A W ℃ ℃
IBM PC TJ Tstg
SYMBOL Rth j-c
PARAMETER Thermal Resistance,Junction to Case
MAX 1.0
UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU2508D
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0,L= 25mH
700
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat)-1 VCE(sat)-2 VBE(sat) ICES
Collector-Emitter Saturation Voltage
IC= 4.5A; IB= 1.1A
5.0
V
Collector-Emitter Saturation Voltage
IC= 4.5A; IB= 1.29A IC= 4.5A; IB= 1.7A VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ VEB= 7.5V; IC= 0 140
1.0
V
Base-Emitter Saturation Voltage
1.3 1.0 2.0 390
V
Collector Cutoff Current
mA
IEBO
Emitter Cutoff Current
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
7
23
hFE-2
DC Current Gain
IC= 4.5A ; VCE= 1V
4
VECF COB
C-E Diode Forward Voltage
IF= 4.5A 80
2.0
V
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
pF
Switching times μs μs
tstg tf
Storage Time IC= 4.5A , IB(end)= 1.1A; LB= 6μH -VBB= 4V; (-dIB/dt= 0.6A/μs) Fall Time
6.0
0.6
isc Website:www.iscsemi.cn
2
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