BU2520AW

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2520AW DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of large screen color TV receivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC ICM Collector Current- Continuous 10 A Collector Current-Peak 25 A IB B Base Current- Continuous 6 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 9 A PC 125 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2520AW TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) VBE(sat) ICES Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 5.0 V Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.1 1.0 2.0 1.0 V Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ VEB= 7.5V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 13 hFE-2 DC Current Gain IC= 6A; VCE= 5V 5 9.5 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 115 pF Switching times μs μs tstg tf Storage Time Fall Time IC= 6A , IB(end)= 1.0A;LC= 650μH; LB= 5.3μH; Cfb= 19nF; -VBB= 4V; (-dIB/dt= 0.8A/μs) 5.5 0.5 isc Website：www.iscsemi.cn 2