BU508AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7.5 8 15 4 6 34 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU508AF TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125℃ VEB=6V; IC=0 1.1 1.0 2.0 10 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=0.1A ; VCE=5V 6 30 fT Transition frequency IC=0.1A ; VCE=5V 7 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 125 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3