IXFK94N50P2

IXFK94N50P2 IXFX94N50P2 Polar2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 94A Ω 55mΩ RDS(on) ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 94 240 A A IA EAS TC = 25°C TC = 25°C 94 3.5 A J PD TC = 25°C 1300 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 30 V/ns -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g G D S Maximum Ratings TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z z Fast Intrinsic Diode Dynamic dv/dt Rating Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 z z z V 5.0 V ± 200 nA z 10 μA 2 mA z 55 mΩ Applications z z z z © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC and DC Motor Drives High Speed Power Switching Application DS100215B(9/11) IXFK94N50P2 IXFX94N50P2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 75 S 14.2 nF 1390 pF 30 pF 0.80 Ω 35 ns 15 ns 73 ns 12 ns 228 nC 63 nC 80 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs TO-264 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.096 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 94 A Repetitive, Pulse Width Limited by TJM 375 A IF = IS , VGS = 0V, Note 1 1.5 V 250 IF = 47A, -di/dt = 100A/μs VR = 100V, VGS = 0V Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM Outline ns 1.5 μC 13 A Terminals: 1 - Gate 2 - Drain 3 - Source Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK94N50P2 IXFX94N50P2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 200 VGS = 10V 7V 80 160 70 140 60 6V 50 VGS = 10V 8V 180 ID - Amperes ID - Amperes 90 40 30 7V 120 100 6V 80 60 20 40 5V 10 5V 20 0 0 0 1 2 3 4 5 6 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 47A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 100 3.2 VGS = 10V 7V 90 VGS = 10V 2.8 80 6V R DS(on) - Normalized ID - Amperes 70 60 50 40 5V 30 2.4 I D = 94A 2.0 I D = 47A 1.6 1.2 20 0.8 10 4V 0 0.4 0 2 4 6 8 10 12 -50 14 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 47A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 100 3.2 VGS = 10V 90 2.8 TJ = 125ºC 80 70 2.4 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.0 1.6 60 50 40 30 TJ = 25ºC 20 1.2 10 0 0.8 0 20 40 60 80 100 120 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 140 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK94N50P2 IXFX94N50P2 Fig. 8. Transconductance Fig. 7. Input Admittance 140 120 TJ = 125ºC 25ºC - 40ºC 100 g f s - Siemens 80 ID - Amperes TJ = - 40ºC 120 100 60 40 25ºC 80 125ºC 60 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 VGS - Volts 50 60 70 80 90 100 110 120 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 10 VDS = 250V 9 I D = 47A 250 8 I G = 10mA 7 VGS - Volts 200 IS - Amperes 40 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 50 VSD - Volts Fig. 11. Capacitance 150 200 250 Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 RDS(on) Limit f = 1 MHz 10,000 100µs 100 Ciss ID - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs 1,000 Coss 10 1ms 100 1 TJ = 150ºC Crss 10ms TC = 25ºC Single Pulse 10 100ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK94N50P2 IXFX94N50P2 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th )JC - ºC / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_94N50P (93) 8-31-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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