IXYX120N120B3

Advance Technical Information IXYK120N120B3 IXYX120N120B3 1200V XPTTM IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = High-Speed IGBT for 10-30 kHz Switching 1200V 120A 2.2V 260ns TO-264P (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 320 160 120 800 A A A A IA EAS TC = 25°C TC = 25°C 60 2 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load ICM = 240 VCE  VCES A PC TC = 25°C 1500 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264P PLUS247 (PLUS247) G E PLUS247 (IXYX) G BVCES IC = 250A, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V 1200 V 3.0 5.0 25 A 1.5 mA TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150C © 2015 IXYS CORPORATION, All Rights Reserved V 200 1.8 2.4 2.2 nA V V C E Tab E = Emitter Tab = Collector Features      Square RBSOA International Standard Packages Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability Advantages  Characteristic Values Min. Typ. Max. G G = Gate C = Collector  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Tab C High Power Density Low Gate Drive Requirement Applications         High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100646(02/15) IXYK120N120B3 IXYX120N120B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 0.8 • VCES, RG = 1 Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 0.8 • VCES, RG = 1 Note 2 RthJC RthCS TO-264P Outline 70 S 9800 567 215 pF pF pF 400 nC 70 190 nC nC 30 54 9.7 340 260 21.5 ns ns mJ ns ns mJ 29 55 14.7 420 406 27.9 ns ns mJ ns ns mJ 0.15 0.10 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2,4 - Collector 3 - Emitter ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.