VMO1600-02P

VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS(on) = 1.7 mΩ max. N-Channel Enhancement Mode D S G KS D KS G S Features eatu MOSFET Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C IF25 IF80 TC = 25°C (diode) TC = 80°C (diode) Symbol Conditions V ± 20 V 1900 900 1600 A A -o TC = 25°C TC = 80°C 1900 1600 00 0 A A Charac Charact Characteristic is Values e ID25 ID80 200 u VGS • PolarHT Polar TM technology t Symbol C,, unless un u ss s otherwise otherw specified) (TVJ = 25qC, RDSon VGS = 10 V; ID = 1600 A; TVJ = 25°C 25° TVJ = 125°C a s min min. VDS = 20 V; ID = 5 mA VDS = VDSS; VGS = 0 V; IGSS VGS = ± 20 V; VDS = 0 V VGS = 10 V; VDSS = 0.5·V 0.5 DSS; ID = ID80 p Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec td(on) tr td(off) tf Eon Eoff Erec RthJC RthJH inductive load VGS = 10 V; VDS = 100 V ID = 1600 A; RG = 1.8 : TVJ = 25°C inductive load VGS = 10 V; VDS = 100 V ID = 1600 A; RG = 1.8 : TVJ = 125°C with heat transfer paste max. 1.58 3.25 1.7 3.6 5 mΩ mΩ V 0.5 mA mA 2.5 TVJ 5°C V = 25°C TVJ = 1 125°C 5° h VGS(th) IDSS t typ. 5.0 0.037 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Applications • converters with high power density for 2 μA 0.03 0.056 nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ K/W K/W 2900 600 1600 320 1220 620 700 24 152 3.7 340 1220 740 580 28 147 4.9 - low RDDSon - dv/dt /dt ruggedness - fast intrinsic reverse diode •P Package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated ceramic base plate - main & aux. AC drives of electric vehicles - DC drives - power supplies 20100302b 1-6 VMO 1600-02P Source Drain Diode Symbol Conditions Characteristic Values min. typ. max. VSD IF = 1600 A; VGS = 0 V; TVJ = 25°C TVJ = 125°C trr Qrr IRM VDS = 100 V; IF = 1600 A dVF /dt = 1300 A/μs TVJ = 25°C trr Qrr IRM VDS = 100 V; IF = 1600 A dVF /dt = 1300 A/μs TVJ = 125°C 1.17 1.13 340 40 210 V V ns μC A 380 56 250 ns μC A Module Maximum Ratings -40...+150 -40...+125 VISOL IISOL < 1 mA; 50/60 Hz Md mounting torque (M6) teminal connection torque (M6) Symbol Conditions V~ Nm m N Nm typ. max. -o Weight VMO 1600-02P VMO 1600-02P Delivering eri Mode Base Qty Qt Code Key Box 2 504288 s Marking on Product Part Name e 250 g p h a Standard 3600 2.25 - 2.75 4.5 - 5.5 Characteristic c Values Va es min. Ordering °C °C t Conditions TVJ Tstg u Symbol IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100302b 2-6 p h a s e -o u t VMO 1600-02P Optional accessories for modules Dimensions in mm (1 mm = 0.0394") keyed twin plugs (UL758, style 1385, CSA class 5851, guide 460-1-1) • Type ZY180L with wire length 350 mm for pins 4 (Gate, yellow wire) and 5 (Kelvin Source, red wire) IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100302b 3-6 VMO 1600-02P 12 1600 1400 ID = 1600 A VDS = 100 V 10 1200 8 VGS [V] ID [A] 1000 800 600 6 4 400 TJ = 25°C 200 0 2 TJ = 25°C 0 2 4 6 8 0 10 0 500 1000 1500 VGS [V] u 1400 1200 200 7V 7V 1000 ID [A] [ 800 800 0 600 400 e 600 6V 200 5V 2 3 4 a 1 VDS [V] 6V 400 s 200 0 3500 TJ = 125°C VGS = 10 V 9V 8V -o ID [A] 1600 TJ = 25°C VGS = 10 V 9V 8V 1000 0 3000 Fig. 2 Typical gate charge characteristic t 1600 1200 2500 QG [nC] Fig. 1 Typical transfer characteristic 1400 2000 0 5 5V 0 1 2 3 4 5 VDS [V] acteristic Fig. 3 Typical output characteristic h Fig. 4 Typical output characteristic 2.0 4.0 5 p 2.5 5V 6V 3.5 4 ID = 1600 A TJ = 125°C 3 RDS(on) 1.0 0.5 2 RDS(on) normal. RDS(on) normalized 1.5 RDS(on) [m:] RDS(on) normal. 3.0 2.5 2.0 8V 9V 10 V 1.5 1 1.0 0.0 -50 -25 0 25 50 75 0 100 125 150 175 TJ [°C] Fig. 5 Typ. drain source on-state resistance RDS(on) versus junction temperature TVJ IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 7V 0.5 0 200 400 600 800 1000 1200 1400 1600 ID [A] Fig. 6 Typ. drain source on-stateresistance RDS(on) versus ID 20100302b 4-6 VMO 1600-02P 30 1200 150 1200 tr VDS = 100 V VGS = 0/10 V RG = 1.8 : 600 10 td(off) VDS = 100 V VGS = 0/10 V RG = 1.8 : 50 400 200 200 Erec(off) Eon 0 0 400 TJ = 125°C td(on) 5 Eoff 0 0 200 400 600 800 1000 1200 1400 1600 1800 0 0 200 400 600 800 1000 1200 1400 1600 1800 ID [A] ID [A] 2000 300 VDS = 100 V VGS = 0/10 V ID = 1600 A C TJ = 125°C 800 150 0 3000 Eoff td(off) e 100 1 10 Eon 40 400 s 20 Erec(off) 0 2 4 6 RG [:] 0 4 6 0 10 8 Fig. 10 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 300 p 400 2 RG [:] switchi g tim Typ. turn-on energy & switc switching times nductive swi swit vs. gate resistor, inductive switching 500 1000 tf 0 h Fig. 9 0 1 10 8 2000 50 a 0 t [ns] td(on) 40 4000 -o 1200 Eoff [mJ] 60 5000 00 A ID = 1600 200 t [ns] Eon, Erec [mJ] TJ = 125°C 250 1600 tr 6000 VDS = 100 V VGS = 0/10 V u 100 Fig. 8 Typ. turn-off energy & switching times vs. ce cu drain source current, inductive switching t Fig.7 Typ. turn-on energy & switching times vs. drain source current, inductive switching 80 600 tf t [ns] 15 800 100 800 TJ = 125°C Eoff [mJ] 20 1000 1000 t [ns] Eon, Erec [mJ] 25 250 VR = 100 V IF = 1600 A TVJ = 125°C IRM [A] trr [ns] 200 300 VR = 100 V IF = 1600 A TVJ = 125°C 200 150 100 100 50 0 0 400 600 800 1000 1200 -diF /dt [A/μs] Fig.11 Typ. reverse recovery time trr of the body diode versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 400 600 800 1000 1200 -diF /dt [A/μs] Fig. 12 Typ. reverse recovery current IRM of the body diode versus di/dt 20100302b 5-6 VMO 1600-02P 60 1400 VR = 100 V TVJ = 125°C 1200 1000 40 IF [A] Qrr [μC] 50 1600 30 800 600 TJ = 125°C 400 20 TJ = 25°C 200 10 400 600 800 1000 0 0.0 1200 0.2 0.4 -diF /dt [A/μs] 1.2 1.4 t e 0.9 ID s 0.9 .9 ID 0.1 ID a 0.1 ID 0 td(off) d(of t u 0.035 0.030 -o 0.9 VGS 0.1 VGS Thermal Respo Response spo se [K/W] [ VGS tr 1.0 Fig. 14 Source urce rce drain current IF (body diode) vs. ypical sou typical source drain voltage VSD 0.040 td(on) 0.8 VSD [V] Fig. 13 Typical reverse recovery charge Qrr of the body diode versus di/dt VDS ID 0.6 0.025 0.020 0.015 0.010 0.005 t tf 1 10 100 1000 10000 t [ms] Fig. 16 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste p h Fig. 15 Definition of switching hing times 0.000 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100302b 6-6