IXFB44N100P

PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 44 A IDM TC = 25°C, pulse width limited by TJM 110 A IAR TC = 25°C 22 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 1250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10s 260 °C FC Mounting torque 30..120/6.7..27 N/lb. 10 g Weight 1000V 44A Ω 220mΩ 300ns PLUS264TM (IXFB) Symbol TJ = = ≤ ≤ G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Plus 264TM package for clip or spring mounting Space savings High power density Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 6.5 V z V z ± 200 nA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls 50 μA 3 mA 220 mΩ DS99867A(04/08) IXFB44N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss PLUS264TM (IXFB) Outline 35 S 19 nF 1060 pF 41 pF 1.70 Ω RGi Gate input resistance td(on) Resistive Switching Times 60 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 68 ns td(off) RG = 1Ω (External) 90 ns 56 ns 305 nC 104 nC 126 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.10 RthCS 0.13 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM °C/W °C/W Characteristic Values Min. Typ. Max. 44 A Repetitive, pulse width limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 22A, -di/dt = 100A/μs VR = 100V 2.5 μC 17 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB44N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 45 90 VGS = 10V 9V 40 35 70 30 60 8V ID - Amperes ID - Amperes VGS = 10V 9V 80 25 20 15 10 50 40 8V 30 20 7V 5 10 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 45 25 30 3.0 VGS = 10V 8V 40 2.8 VGS = 10V 2.6 35 2.4 RDS(on) - Normalized ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 30 25 20 7V 15 2.2 2.0 I D = 44A 1.8 1.6 I D = 22A 1.4 1.2 1.0 10 0.8 5 6V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 50 2.6 VGS = 10V 2.4 TJ = 125ºC 45 40 2.2 35 2.0 ID - Amperes RDS(on) - Normalized 15 VDS - Volts VDS - Volts 1.8 1.6 TJ = 25ºC 1.4 30 25 20 15 1.2 10 1.0 5 0 0.8 0 10 20 30 40 50 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 60 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFB44N100P Fig. 7. Input Admittance Fig. 8. Transconductance 50 60 45 55 TJ = - 40ºC 50 40 45 TJ = 125ºC 25ºC - 40ºC 30 g f s - Siemens ID - Amperes 35 25 20 25ºC 40 125ºC 35 30 25 20 15 15 10 10 5 5 0 0 5 5.5 6 6.5 7 7.5 8 8.5 0 9 5 10 15 VGS - Volts 20 25 30 35 40 45 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 130 120 VDS = 500V 14 I D = 22A 110 100 I G = 10mA 12 VGS - Volts IS - Amperes 90 80 70 60 50 TJ = 125ºC 10 8 6 40 30 4 TJ = 25ºC 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss 0.100 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_44N100P(97)4-01-08-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.