IXFR80N50Q3
Q3-Class
HiperFETTM
Power MOSFET
VDSS
ID25
RDS(on)
trr
D
(Electrically Isolated Tab)
=
=
500V
50A
72m
250ns
G
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
S
ISOPLUS247
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
500
V
VDGR
TJ = 25C to 150C, RGS = 1M
500
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
IDM
TC = 25C, Pulse Width Limited by TJM
IA
EAS
50
A
240
A
TC = 25C
TC = 25C
80
5
A
J
dv/dt
IS IDM, VDD VDSS, TJ 150C
50
V/ns
PD
TC = 25C
570
W
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
VISOL
50/60 Hz, 1 Minute
FC
Mounting Force
2500 V
20..120/4.5..27
N/lb.
5
g
Weight
G
D
Isolated Tab
S
G = Gate
S = Source
D
= Drain
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Low Intrinsic Gate Resistance
2500V~ Electrical Isolation
Fast Intrinsic Rectifier
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
500
VGS(th)
VDS = VGS, ID = 8mA
3.5
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 40A, Note 1
Applications
V
6.5
V
200 nA
TJ = 125C
© 2019 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Space Savings
50 A
2 mA
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
72 m
DS100323B(12/19)
IXFR80N50Q3
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 40A, Note 1
35
55
S
10
nF
1260
pF
115
pF
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
0.15
Qgs
30
ns
20
ns
43
ns
15
ns
200
nC
77
nC
90
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 40A
RG = 1 (External)
Qg(on)
VGS = 10V, VDS = 0.5 • VDSS, ID = 40A
Qgd
RthJC
0.22C/W
RthCS
0.15
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
Note
Characteristic Values
Min.
Typ.
Max.
80
A
Repetitive, Pulse Width Limited by TJM
320
A
IF = IS, VGS = 0V, Note 1
1.4
V
IF = 40A, -di/dt = 100A/s
1.8
15.6
VR = 100V, VGS = 0V
250 ns
C
A
1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFR80N50Q3
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
80
180
V GS = 10V
V GS = 10V
160
70
120
50
I D - Amperes
I D - Amperes
140
9V
60
40
30
8V
9V
100
80
60
20
40
10
8V
20
7V
7V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
5
10
15
3.4
80
VGS = 10V
9V
50
RDS(on) - Normalized
I D - Amperes
30
8V
40
30
20
V GS = 10V
3.0
60
2.6
I D = 80A
2.2
I D = 40A
1.8
1.4
1.0
7V
10
0.6
6V
0
0.2
0
2
4
6
8
10
12
-50
-25
0
VDS - Volts
VGS = 10V
2.8
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
Fig. 5. RDS(on) Normalized to ID = 40A Value vs.
Drain Current
3.0
60
o
TJ = 125 C
50
2.6
2.4
40
2.2
I D - Amperes
R DS(on) - Normalized
25
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
70
20
VDS - Volts
VDS - Volts
2.0
1.8
1.6
30
20
1.4
o
TJ = 25 C
1.2
10
1.0
0.8
0
0
20
40
60
80
100
120
I D - Amperes
© 2019 IXYS CORPORATION, All Rights Reserved
140
160
180
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFR80N50Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
120
100
o
TJ = - 40 C
100
80
o
o
TJ = 125 C
o
25 C
o
- 40 C
60
25 C
g f s - Siemens
I D - Amperes
80
60
o
125 C
40
40
20
20
0
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0
20
40
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
80
100
120
Fig. 10. Gate Charge
240
16
VDS = 250V
14
200
I D = 40A
I G = 10mA
12
160
VGS - Volts
I S - Amperes
60
I D - Amperes
120
80
10
8
6
o
TJ = 125 C
4
o
TJ = 25 C
40
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
40
80
VSD - Volts
Fig. 11. Capacitance
160
200
240
280
Fig. 12. Forward-Bias Safe Operating Area
100,000
1000
f = 1 MHz
RDS(on) Limit
Ciss
10,000
100
I D - Amperes
Capacitance - PicoFarads
120
QG - NanoCoulombs
1,000
Coss
100
100µs
10
1
o
TJ = 150 C
C rss
o
TC = 25 C
Single Pulse
10
1ms
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFR80N50Q3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
aaaaa
0.3
Z(th)JC - K / W
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2019 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_80N50Q3(Q8) 6-20-11-C
IXFR80N50Q3
ISOPLUS247 (IXFR) Outline
1 = Gate
2,4 = Drain
3 = Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFR80N50Q3
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2019 IXYS CORPORATION, All Rights Reserved