IXGH38N60

Ultra-Low VCE(sat) IGBT IXGH 38N60 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 76 A I C90 TC = 90°C 38 A I CM TC = 25°C, 1 ms 152 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH ICM = 76 @ 0.8 VCES A PC TC = 25°C 200 W -55 ... +150 °C T JM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C VCES I C25 VCE(sat) = 600 V = 76 A = 1.8 V TO-247 AD G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features l l l l l International standard package JEDEC TO-247 AD 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 250 µA, VGE = 0 V 600 V GE(th) IC = 250 µA, VCE = VGE 2.5 I CES VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V V CE(sat) IC = IC90, VGE = 15 V © 1996 IXYS All rights reserved l l l BV CES I GES l TJ = 25°C TJ = 125°C V 5 AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies V 200 1 µA mA ±100 nA 1.8 V Advantages l l l Easy to mount with 1 screw (isolated mounting screw hole) Low losses, high efficiency High power density 93025C (7/94) IXGH 38N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = I C90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 15 Cies Coes 20 S 2500 pF 230 pF 70 pF VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Q ge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES , RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 150 nC 23 35 nC 50 75 nC 30 ns 150 ns 600 1200 ns 500 700 ns 9 Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES , RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 125 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 15 mJ 40 ns 160 ns 1 mJ 800 ns 1000 ns 15 mJ 0.62 K/W RthJC RthCK TO-247 AD Outline 0.25 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025