MDMA35P1200TG

MDMA35P1200TG Standard Rectifier Module VRRM = 2x 1200 V I FAV = 35 A VF = 1.1 V Phase leg Part number MDMA35P1200TG Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d MDMA35P1200TG Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 1300 V 1200 V TVJ = 25°C 20 µA VR = 1200 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.15 V 1.34 V 1.10 V IF = 35 A IF = 70 A IF = 35 A IF = 70 A TVJ = 125 °C TC = 100 °C 1.35 V T VJ = 150 °C 35 A TVJ = 150 °C 0.83 V 7.3 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 1200 V rectangular Ptot min. 0.9 K/W K/W 0.2 TC = 25°C 130 W t = 10 ms; (50 Hz), sine TVJ = 45°C 500 A t = 8,3 ms; (60 Hz), sine VR = 0 V 540 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 425 A t = 8,3 ms; (60 Hz), sine VR = 0 V 460 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.25 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.22 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 905 A²s 880 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 19 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191202d MDMA35P1200TG Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 150 °C -40 125 °C 125 °C 76 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL UL Logo Date Code + Location 16.0 50/60 Hz, RMS; IISOL ≤ 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Part description M D M A 35 P 1200 TG Circuit yywwZ XXXXXXXX 2D Barcode 123456 Part Number Lot# Ordering Standard Ordering Number MDMA35P1200TG Equivalent Circuits for Simulation V0 13.0 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product MDMA35P1200TG * on die level = = = = = = = = Module Diode Standard Rectifier (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-240AA Delivery Mode Box Code No. 515021 T VJ = 150°C Rectifier V 0 max threshold voltage 0.83 V R0 max slope resistance * 6.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d MDMA35P1200TG Outlines TO-240AA 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d MDMA35P1200TG Rectifier 120 500 104 50 Hz, 80%VRRM VR = 0 V 100 400 80 TVJ = 45°C IFSM IF 60 I 2t 103 300 [A] [A] TVJ = 45°C 2 [A s] 40 TVJ = 150°C TVJ = 150°C 200 TVJ = 25°C TVJ = 125°C TVJ = 150°C 20 0 0.5 1.0 1.5 100 0.001 2.0 102 0.01 VF [V] 0.1 1 1 2 t [s] 4 5 6 7 8 910 2 Fig. 2 Surge overload current vs. time per diode Fig. 1 Forward current versus voltage drop per diode 3 t [ms] Fig. 3 I t versus time per diode 90 60 50 DC = 1 0.5 0.4 0.33 0.17 0.08 40 Ptot 30 75 RthHA = 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 6.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 60 IF(AV)M 45 [A] [W] 20 30 10 15 0 0 0 10 20 30 40 0 IF(AV)M [A] 50 100 150 0 50 100 150 TC [°C] Tamb [°C] Fig. 5 Max. forward current vs. case temperature per diode Fig. 4 Power dissipation vs. forward current and ambient temperature per diode 1.0 0.8 ZthJC Constants for ZthJC calculation: 0.6 i Rthi (K/W) ti (s) 1 0.042 0.001 2 0.128 0.010 3 0.425 0.050 4 0.305 0.230 [K/W] 0.4 0.2 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d