2SB1185

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB1185 TO-220-3L TRANSISTOR (PNP) 1. BASE FEATURES z Low Collector Saturation Voltage z Complement to Type 2SD1762 2. COLLECTOR 3. EMITTER APPLICATIONS z For Use in Low Frequency Power Amplifier Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -3 A PC Collector Power Dissipation 2 W Thermal Resistance From Junction To Ambient 63 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50µA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V,IE=0 -1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -1 μA hFE DC current gain * VCE=-3V, IC=-0.5A 60 320 Collector-emitter saturation voltage VCE(sat)* IC=-2A,IB=-0.2A -1 V Base-emitter saturation voltage * VBE (sat) IC=-2A,IB=-0.2A -1.5 V Cob Collector output capacitance fT Transition frequency VCB=-10V,IE=0, f=1MHz 50 pF VCE=-5V,IC=-0.5A, f=30MHz 70 MHz *Pulse test CLASSIFICATION OF hFE RANK D E F RANGE 60-120 100-200 160-320 www.cj-elec.com 1 B,Nov,2014 TO-220-3L Package Outline Dimensions Symbol A A1 b b1 c c1 D E E1 e e1 F h L L1 Φ www.cj-elec.com Dimensions In Millimeters Min Max 4.470 4.670 2.520 2.820 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.500 8.900 12.060 12.460 2.540 TYP 4.980 5.180 2.590 2.890 0.000 0.300 13.400 13.800 3.560 3.960 3.735 3.935 2 Dimensions In Inches Min Max 0.176 0.184 0.099 0.111 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.394 0.406 0.335 0.350 0.475 0.491 0.100 TYP 0.196 0.204 0.102 0.114 0.000 0.012 0.528 0.543 0.140 0.156 0.147 0.155 B,Nov,2014