2SB647

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TO – 92M TO – 92MOD TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD667/A 2. COLLECTOR 3. EMITTER 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage Unit -120 V 2SB647 -80 2SB647A -100 -5 V -1 A Emitter-Base Voltage VEBO Value V IC Collector Current PC Collector Power Dissipation 900 mW Thermal Resistance From Junction To Ambient 139 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= -10µA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 hFE(1)* DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VBE Collector output capacitance Cob fT Transition frequency Max 2SB647 -80 2SB647A -100 VCE=-5V, IC=-500mA * Unit V V -5 VCE=-5V, IC=-150mA * VCE(sat) * Typ V VCB=-100V,IE=0 ICBO Collector cut-off current Min -120 -10 2SB647 60 320 2SB647A 60 200 μA 30 IC=-500mA,IB=-50mA -1 -1.5 VCE=-5V, IC=-150mA V V VCB=-10V,IE=0, f=1MHz 20 pF VCE=-5V,IC=-150mA 140 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) 2SB647 TYPE 2SB647A RANK B C D RANGE 60-120 100-200 160-320 www.cj-elec.com 1 A,Jun,2014 D,Mar,2016 Typical Characteristics Static Characteristic -200 -1mA IC -0.8mA -0.6mA -0.5mA -0.4mA -0.3mA -50 IC Ta=100℃ DC CURRENT GAIN -0.7mA -100 —— COMMON EMITTER VCE= -5V hFE (mA) -0.9mA -150 COLLECTOR CURRENT hFE 1000 COMMON EMITTER Ta=25℃ Ta=25℃ 100 -0.2mA IB=-0.1mA -0 10 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VBEsat —— -1000 -6 -7 -1 IC VCEsat -500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— -100 IC -1000 (mA) IC β=10 β=10 Ta=25℃ -600 Ta=100 ℃ -400 -200 -0 -0.1 -1 -10 -100 COLLECTOR CURREMT IC -1000 —— IC Ta=100 ℃ -100 Ta=25℃ -10 -0.1 -1000 -1 -10 COLLECTOR CURREMT (mA) VBE fT 500 -1000 (mA) IC Ta=25℃ TRANSITION FREQUENCY -10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT -100 —— -100 IC COMMON EMITTER VCE= -5V (MHz) COMMON EMITTER VCE=-5V (mA) -10 COLLECTOR CURRENT VCE (V) -1 100 -0.1 -0 -200 -400 -600 -800 10 -20 -1000 -40 1000 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ Cob 10 1 -0.1 -80 —— IC -100 (mA) Ta 900 600 300 0 -1 REVERSE VOLTAGE www.cj-elec.com PC 1200 f=1MHz IE=0/IC=0 100 -60 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) -10 V 0 -30 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) A,Jun,2014 D,Mar,2016 Dimensions In Millimeters Min. Max. 4.800 5.000 1.730 2.030 0.440 0.600 0.940 1.100 0.350 0.450 5.900 6.100 4.000 8.500 8.700 1.500 TYP. 2.900 3.100 13.800 14.200 1.600 0.000 0.380 Symbol A A1 b b1 c D D1 E e e1 L Φ h www.cj-elec.com 3 Dimensions In Inches Min. Max. 0.189 0.197 0.068 0.080 0.017 0.024 0.037 0.043 0.014 0.018 0.232 0.240 0.157 0.335 0.343 0.059 TYP. 0.114 0.122 0.543 0.559 0.063 0.000 0.015 A,Jun,2014 D,Mar,2016 www.cj-elec.com 4 D,Mar,2016