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CJU15N10

CJU15N10

  • 厂商:

    JIANGSU(长晶)

  • 封装:

  • 描述:

  • 数据手册
  • 价格&库存
CJU15N10 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJUN N-Channel Power MOSFET V(BR)DSS RDS(on)TYP ID 100V 70mΩ@10V 15A TO-252-2L DESCRIPTION The CJU15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications 1. GATE 2. DRAIN 3. SOURCE 2 1 FEATURE  Excellent package for good heat dissipation Ultra low gate charge   Low reverse transfer capacitance Fast switching capability   Avalanche energy specified APPLICATION  Power switching application MARKING EQUIVALENT CIRCUIT U15N10 XXXX 3 U15N10 = Device code. Solid dot = Green molding compound device, if none, the normal device. XXXX = Code. 2 1 3 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID ① 15 A Pulsed Drain Current IDM ② 60 A Single Pulsed Avalanche Energy EAS ③ 49 mJ PD ① Power Dissipation Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to Case W RθJA 100 ℃/W RθJC ① 2.78 ℃/W -55~+150 ℃ TJ ,Tstg Operating Junction and Storage Temperature Range www.jscj-elec.com 45 ⑥ 1 Rev. - 2.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min V(BR) DSS VGS = 0V, ID =250µA 100 Typ Max Unit Off characteristics Drain-source breakdown voltage TJ =25℃ 1.0 TJ =125℃ 100 Zero gate voltage drain current IDSS VDS =80V, VGS =0V Gate-body leakage current IGSS VDS =0V, VGS =±20V Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA Static drain-source on-sate resistance RDS(on) VGS =10V, ID =8A On characteristics V µA ±100 nA 2.5 3.0 V 70 100 mΩ 773 1500 46 92 43 90 ④ Dynamic characteristics 1.0 ④⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =25V,VGS =0V, f = 100KHz f =1MHz pF Ω 1.5 ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time 18 36 2.8 5.6 Qgd 7.4 14.8 td(on) 15 VGS=10V, VDS=50V, ID=10A VDD=25V,RL=5Ω, tr VGS=10V,RG=1.0Ω td(off) tf 33 nC ns 41 6 Drain-Source Diode Characteristics Drain-source diode forward voltage VSD Continuous drain-source diode forward IS current Pulsed drain-source diode forward current ④ 1.2 V ① 15 A ② 60 A ISM VGS =0V, IS=8A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=25V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ = 25℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25℃. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Transfer Characteristics Output Characteristics 20 5 TJ=25℃ Pulsed VDS=60V Pulsed 4 VGS=6V DRAIN CURRENT DRAIN CURRENT ID (A) 15 ID (A) VGS=10V,8V 10 3 TJ=25℃ 2 5 VGS=4.5V 1 VGS=4V 0 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 (V) 1 2 VGS 5 6 (V) 160 ID=8A Pulsed Pulsed (m) TJ=25℃ 80 RDS(ON) VGS= 10V RDS(ON) (m) 4 RDS(ON)—— VGS RDS(ON) —— ID 100 60 ON-RESISTANCE ON-RESISTANCE 3 GATE TO SOURCE VOLTAGE 40 120 TJ=125℃ 80 TJ=25℃ 20 40 2 4 6 8 DRAIN CURRENT 10 ID 12 14 2 (A) 4 6 8 10 GATE TO SOURCE VOLTAGE IS —— VSD VGS Threshold Voltage 4 50 Pulsed (V) 3 VTH 10 TJ=125℃ THRESHOLD VOLTAGE IS (A) Pulsed SOURCE CURRENT 12 (V) TJ=25℃ 1 0.1 1 0.2 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 2 1 0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 2.0 Typical Characteristics Gate Charge Capacitances 10 f=100KHz Pulsed VDS=50V ID =10A Pulsed 8 VGS Ciss 1000 GATE TO SOURCE VOLTAGE CAPACITANCE C (pF) (V) 10000 Coss 100 Crss 10 0.1 4 2 0 1 DRAIN TO SOURCEVOLTAGE www.jscj-elec.com 6 10 0 50 VDS (V) 5 10 15 20 GATE CHARGE (nC) 4 Rev. - 2.0 TO-252-2L Package Outline Dimensions D A D1 c V L3 h E φ L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 1.100 1.300 0° 8° 0.000 0.300 5.250 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.207 REF. TO-252-2L Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 2.0 TO-252-2L Tape and Reel www.jscj-elec.com 6 Rev. - 2.0
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