FMMT618

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT–23 FMMT TRANSISTOR (131) FEATURE z Extremely low saturation voltage z Complementary PN3 type: FMMT18 1. BASE 2. EMITTER 3. COLLECTOR APPLICATION z Gate Driving MOSFETs and IGBTs z DC-DC converters z Charging circuit z Power switches MARKING: 18 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IB Base Current 0.5 A IC Collector Current -Continuous 2.5 A PC Total Collector Dissipation 350 mW Thermal Resistance from Junction to Ambient 357 ℃/W -55~+150 ℃ RΘJA TJ,Tstg Operation Junction and Storage Temperature Range www.jscj-elec.com 1 Rev. - 2.0 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol Test conditions Min Typ Max Unit V(BR)CBO IC=100μA,IE=0 20 Collector-emitter breakdown voltage (note 1) V(BR)CEO IC=10mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100μA ,IC=0 5 V V Collector cut-off current ICBO VCB=16V,IE=0 100 nA Emitter cut-off current IEBO VEB=4V,IC=0 100 nA hFE(1) VCE=2V, IC=10mA 200 hFE(2) VCE=2V, IC=0.2A 300 hFE(3) VCE=2V, IC=2A 200 hFE(4) VCE=2V, IC=4A 100 DC current gain (note 1) Collector-emitter saturation voltage (note 1) VCE(sat)1 IC=0.1A,IB=10mA 15 mV VCE(sat)2 IC=1A,IB=10mA 150 mV VCE(sat)3 IC=2A,IB=0mA 200 mV Base-emitter saturation voltage (note 1) VBE(sat) IC=2A,IB=50mA 1 V Base-emitter on voltage (note 1) VBE(on) IC=2A, VCE=2V 1 V 30 pF Output capacitance Cob Turn-on time t(on) Turn-off time t(off) Transition frequency fT VCB=10V, f=1MHz VCC=10V, IC=1A, IB1=-IB2=10mA VCE=10V,IC=50mA, f=100MHz 100 170 ns 400 ns MHz Notes : 1. Pulse test: Pulse width≤300μs,duty cycle≤2.0%. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Static Characteristic 700 COMMON EMITTER Ta=25℃ 0.72mA 500 DC CURRENT GAIN 0.56mA 400 0.48mA 300 800 o 0.64mA IC COLLECTOR CURRENT VCE= 2V 0.8mA hFE (mA) 600 hFE —— IC 1000 0.4mA 200 0.32mA 100 0.16mA 0.24mA Ta=100 C 600 400 o Ta=25 C 200 IB=0.08mA 0 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE 6 VCE 7 1 1000 IC 2500 (mA) IC 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=50 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 100 VCEsat —— VBEsat —— IC 1000 10 COLLECTOR CURRENT (V) 800 Ta=25℃ 600 Ta=100℃ 400 β=50 150 100 Ta=100℃ 50 200 Ta=25℃ 0 0 1 10 100 COLLECTOR CURRENT fT 200 —— 2500 1000 IC 1 100 COLLECTOR CURRENT IC Cob / Cib 1000 —— 1000 IC 2500 (mA) VCB / VEB (MHz) f=1MHz IE=0 / IC=0 o Ta=25 C (pF) CAPACITANCE C fT 150 TRANSITION FREQUENCY 10 (mA) 100 100 Cib Cob 10 50 VCE=10V o Ta=25 C 0 0 20 40 60 COLLECTOR CURRENT VBE —— 80 IC 1 0.1 100 IC Pc 2500 COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) 10 —— V 20 (V) Ta 500 VCE= 2V COLLECTOR CURRENT 1 REVERSE VOLTAGE (mA) 2000 1500 o Ta=100 C 1000 Ta=25℃ 500 0 200 300 200 100 0 400 600 BASE-EMITTER VOLTAGE www.jscj-elec.com 400 800 1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 3 100 Ta 125 150 (℃ ) Rev. - 2.0 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 SOT-23 Tape and Reel www.jscj-elec.com 5 Rev. - 2.0