2SB1096

JMnic Product Specification Silicon PNP Power Transistors 2SB1096 DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Complement to type 2SD1587 APPLICATIONS ・For TV vertical output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -200 -150 -5 -2 2.0 W UNIT V V V A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-30mA; IB=0 IE=-1mA; IC=0 IC=-500mA ;IB=-50mA IC=-500mA ;IB=-50mA VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-0.4A ; VCE=-10V IC=-0.4A; VCE=-10V 40 5 MIN -150 -5 2SB1096 TYP. MAX UNIT V V -1.0 -1.5 -50 -50 200 V V μA μA MHz hFE Classifications M 40-80 L 60-120 K 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1096 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3