JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ・With TO-220F package ・Complement to type 2SD1666 ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・For low-frequency and general-purpose amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SB1133
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -40~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS MAX -60 -60 -6 -3 -8 2 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-5V VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IE=0 ; VCB=-10V; f=1MHz IC=-0.5A ; VCE=-5V 70 20 MIN -60 -60 -6
2SB1133
TYP.
MAX
UNIT V V V
-1.0 -1.0 -100 -100 280
V V μA μA
110 40
pF MHz
hFE-1 Classifications Q 70-140 R 100-200 S 140-280
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1133
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1133
4
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