2SB1193

JMnic Product Specification Silicon PNP Power Transistors 2SB1193 DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1773 APPLICATIONS ・For medium speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 50 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -8 -12 2 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors 2SB1193 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-2A; RBE=∞;L=10mH IE=-50mA; IC=0 IC=-4A ;IB=-8mA IC=-8A ;IB=-80mA IC=-4A ;IB=-8mA IC=-8A ;IB=-80mA VCB=-120V; IE=0 VCE=-100V; RBE=∞ IC=-4A ; VCE=-3V 1000 MIN -120 -7 -1.5 -3.0 -2.0 -3.5 -100 -10 20000 TYP. MAX UNIT V V V V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A ;IB1=-IB2=-8mA VCC=-50V 0.7 3.5 2.0 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1193 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3