2SC5287

JMnic Product Specification Silicon NPN Power Transistors 2SC5287 DESCRIPTION ・With TO-3PN package ・High voltage,high speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 900 550 7 5 10 2.5 80 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5287 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 550 V VCEsat Collector-emitter saturation voltage IC=1.8A; IB=0.36A 0.5 V VBEsat Base-emitter saturation voltage IC=1.8A; IB=0.36A 1.2 V μA μA ICBO Collector cut-off current VCB=800V; IE=0 100 IEBO Emitter cut-off current VEB=7V; IC=0 100 hFE DC current gain IC=1.8A ; VCE=4V 10 25 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF fT Transition frequency IE=-0.35A ; VCE=12V 6 MHz Switching times μs μs μs ton Turn-on time IC=1.8A; RL=139Ω IB1=0.27A; IB2=-0.9A VCC=250V 0.7 ts Storage time 4.0 tf Fall time 0.5 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5287 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC5287 4