2SC792

JMnic Product Specification Silicon NPN Power Transistors 2SC792 DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For voltage regulator,inverter,switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 400 300 5 1.5 50 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC792 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=1.5A; IB=0.3A 5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V μA μA ICBO Collector cut-off current VCB=300V; IE=0 50 IEBO Emitter cut-off current VEB=5V; IC=0 50 hFE DC current gain IC=0.3A ; VCE=10V 30 200 fT Transition frequency IC=0.1A ; VCE=10V 10 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC792 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3