2SD2296

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2296 DESCRIPTION ・With TO-3PN package ・High breakdown voltage APPLICATIONS ・For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 6 50 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VEBO VCEsat VBEsat ICES hFE PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain CONDITIONS IC=10mA ;RBE=∞ IE=10mA ;IC=0 IC=4.5A; IB=1.2A IC=4.5A; IB=1.2A VCE=1500V ;RBE=0 IC=1A ; VCE=5V 8 MIN 800 6 TYP. 2SD2296 MAX UNIT V V 5.0 1.5 0.5 30 V V mA Switching times tf Fall time IC=4.0A IB1=0.8A;IB2≈-1.5A 0.8 μs JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SD2296 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic