SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES
・Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700.
A G
KTC4075F
EPITAXIAL PLANAR NPN TRANSISTOR
E B
K
・Complementary to KTA2014F. ・Thin Fine Pitch Small Package.
3 1
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 5 150 30 50 150 -55~150 UNIT V V V mA mA mW ℃ ℃
1. EMITTER 2. BASE 3. COLLECTOR
C
TFSM
Marking
L
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF TEST CONDITION VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1kHz, Rg=10kΩ BL(8):350~700 MIN. 70 80 TYP. 0.1 2.0 1.0
J
D
・Low Noise : NF=1dB(Typ.), 10dB(Max.).
2
DIM A B C D E G J K
MILLIMETERS _ 0.6 + 0.05 _ 0.8 + 0.05 0.38+0.02/-0.04 _ 0.2 + 0.05 _ 1.0 + 0.05 _ 0.35+ 0.05 _ 0.1 + 0.05 _ 0.15 + 0.05
Type Name
h FE Rank
MAX. 0.1 0.1 700 0.25 3.5 10
UNIT μ A μ A
V MHz pF dB
Note : hFE Classification O(2):70~140, Y(4):120~240, GR(6):200~400,
2005. 4. 21
Revision No : 0
1/3
KTC4075F
I C - V CE
240
h FE - I C
1k
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
6.0
5.0 3.0
2.0
DC CURRENT GAIN h FE
200 160 120 80 40 0
COMMON EMITTER Ta=25 C
500 300
Ta=100 C Ta=25 C Ta=-25 C VCE =6V
1.0 0.5 I B =0.2mA 0
100 50 30
VCE =1V
0
1
2
3
4
5
6
7
10 0.1
0.3
1
3
10
30
100
300
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT I C (mA)
V CE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
1 0.5 0.3
V BE(sat) - I C
10
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
COMMON EMITTER I C /I B =10
5 3
COMMON EMITTER I C /I B =10 Ta=25 C
0.1 0.05 0.03
Ta
=1
00
C
1 0.5 0.3
Ta=25 C Ta=-25 C
0.01 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA)
0.1
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I C (mA)
fT - IC
TRANSITION FREQUENCY f T (MHz)
3k 1k 500 300 100 50 30 10 0.1
COMMON EMITTER V CE =10V Ta=25 C
I B - V BE
3k 1k 300 100 30 10 3 1 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2
Ta=1 00 C Ta=2 5C Ta=25 C
0.3
1
3
10
30
100
300
BASE CURRENT I B (µA)
COMMON EMITTER VCE =6V
COLLECTOR CURRENT I C (mA)
BASE-EMITTER VOLTAGE V BE (V)
2005. 4. 21
Revision No : 0
2/3
KTC4075F
h PARAMETER - I C
2k 1k 500 300 100
GR BL Y O h ie xkΩ BL Y O GR Y O h re x10
-4
h PARAMETER - V CE
2k 1k 300
GR COMMON EMITTER I C =2mA, Ta=25 C BL Y O h fe
COMMON EMITTER VCE =12V, f=270Hz Ta=25 C h fe BL Y O Ω h oe xµ
h PARAMETER
50 30 10 5 3 1 0.5 0.3 0.1
GR GR
h PARAMETER
100 30 10 3
GR Y
BL Y O
O h ie xkΩ
GR
BL GR Y h re x10 -4 O
BL
1 0.3 0.1 0.5
0.1
0.5
1
3
5
10
30 50
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR POWER DISSIPATION PC (mW)
Pc - Ta
100
75
50
25
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2005. 4. 21
Revision No : 0
Ω
BL
h oe xµ
300
3/3
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