KU2303Q

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack. D P KU2303Q N-Ch Trench MOSFET H T G L FEATURES VDSS=30V, ID=14A. Drain to Source On Resistance. RDS(ON)=8.2m (Max.) @ VGS=10V RDS(ON)=14.7m (Max.) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation DC@Ta=25 Pulsed @Ta=25 Unless otherwise noted) SYMBOL RATING VDSS VGSS (Note 1) ID IDP (Note 1) PD Tj Tstg (Note 1) RthJA 30 20 14 56 2.5 150 -55~150 50 /W UNIT V V A A W DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note1) Surface Mounted on 1″ 1″ FR4 Board, t 10sec. KU2303Q PIN CONNECTION (TOP VIEW) S S S G 1 8 D D D D 1 2 3 8 7 6 5 2 7 3 6 4 4 5 2009. 4. 24 Revision No : 0 1/4 KU2303Q ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Forward Voltage Reverse Recovery Time Reverse Recovered Charge Note2) Pulse Test : Pulse Width 300 VSD trr Qrr VGS=0V, IS=14A IS=14A, dI/dt=100A/ s IS=14A, dI/dt=100A/ s (Note2) 0.8 17.7 8.4 1.2 V ns nC VGS=10V VGS=4.5V Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDS=15V, VGS=10V ID=14A, RG=1.6 (Note2) VDS=15V, VGS=10V, ID=14A (Note2) 3.0 4.9 6.2 7.0 20.3 6.0 ns f=1MHz VDS=15V, VGS=0V, f=1MHz (Note2) 937 311 154 1.3 18.4 9.6 nC Ω pF BVDSS IDSS IGSS Vth RDS(ON) gfs VGS=0V, ID=250 A VGS=0V, VDS=30V VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=14A VGS=4.5V, ID=11A VDS=5V, ID=14A (Note2) (Note2) (Note2) 30 1.0 6.8 12.3 46 1 100 3.0 8.2 14.7 m S V A nA V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT , Duty Cycle 2% 2009. 4. 24 Revision No : 0 2/4 KU2303Q Drain to Source On Resistance RDS(ON) (mΩ) Fig1. ID - VDS 60 VGS=10V 5V 4.5V Fig2. RDS(on) - ID 20 16 12 8 VGS=10V VGS=4.5V Drain Current ID (A) 48 4.0V 36 24 12 3.0V 3.5V 4 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 12 24 36 48 60 Drain to Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS VDS=5V Fig4. RDS(ON) - Tj Normalized On Resistance RDS(ON) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 VGS=4.5V, ID=11A VGS=10V, ID=14A 60 Drain Current ID (A) 48 36 Tj=25 C 24 12 0 Tj=150 C Tj=-55 C 1 2 3 4 5 Gate to Source Voltage VGS (V) Junction Temperature Tj ( C ) Normalized Gate to Source Threshold Voltage Fig5. Vth - Tj 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 102 Fig6. IS - VSD Reverse Drain Current IS (A) VDS = VGS, ID = 250µA 101 Tj=150 C Tj=25 C 100 Tj=-55 C 10-1 10-2 0.2 0.4 0.6 0.8 1.0 1.2 Junction Temperature Tj ( C ) Source to Drain Voltage VSD (V) 2009. 4. 24 Revision No : 0 3/4 KU2303Q Drain to Source On Resistance RDS(ON) (mΩ) Fig7. RDS(ON) - VGS 25 ID=14A Fig8. C - VDS 104 f=1MHz Capacitance C (pF) 20 15 Tj=150 C 103 Ciss Coss 10 5 0 Crss 102 Tj=25 C 0 2 4 6 8 10 12 101 0 5 10 15 20 25 30 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Fig9. Qg - VGS 10 Fig10. Safe Operation Area 102 Gate to Source Voltage VGS (V) VDS = 15V, ID = 14A Drain Current ID (A) 8 101 ( DS ON ) 100us LI M IT 1ms 10ms 100ms 6 100 R 4 2 10-1 0 0 5 10 15 20 25 10-2 10-2 VGS= 10V SINGLE PULSE TA= 25 C DC 10-1 100 101 102 Gate to Charge Qg (nC) Drain to Source Voltage VDS (V) Fig11. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 101 100 0.5 0.2 10-1 0.1 0.05 0.02 10-2 0.01 Single Pulse PDM t1 t2 RthJA=61.2 C/W 10-3 10-4 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration (sec) 2009. 4. 24 Revision No : 0 4/4