1N4151W

S MD Type SMALL SIGNAL DIODES 1N4151W Diodes SOD-123 2.7 +0.1 -0.1 +0.1 0.55-0.1 Unit: mm +0.05 1.1-0.05 Silicon Epitaxial Planar Diode Fast switching diods. This diods is also available in other case styles including: the SOD-123 case with the type designation 1N4151W and the Mini-MELF case with the type disignation LL4151. +0.05 0.1-0.02 +0.1 3.7-0.1 0.1max 0.50 0.35 Absolute M axim um R atings T a = 25 P aram ater R everse voktage P eak reverse voktage R ectified current (A verage) H alf wave rectification with resist.load at Tam b = 25 and f 50H z I F SM P tot Tj Ts 500 410 (1) 150 -65 to+150 mA mW Io 150 (1) mA S ym bol VR V RM V alue 50 75 U nit V V S urge forward current at t < 1 s and T j = 25 P ower dissipation at T amb = 25 Junction tem perature S torage tem perature range N O TE S :: (1) V alid provided that electrodes are kept at am bient tem perature +0.1 1.6-0.1 Features www.kexin.com.cn 1 S MD Type SMALL SIGNAL DIODES 1N4151W Diodes Electrical Characteristics T a = 25 Characteristic Forward voltage at I F =50 m A Leakage current at V R = 50 V at V R = 20 V, T j = 150 Reverse breakdown voltage Tested with 5 Capacitance at V F = V R = 0 V Reverse recovery tim e from I F = 10 m A through I R = 10 m A, to I R = 1 m A from I F = 10 m A to I R = 1 m A, V R =6 V, R L = 100 Therm al Resistance Junction to Am bient Air Rectification Efficiency at f = 100MHz, V RF =2 V NO TES:: (1) Valid provided that electrodes are kept at am bient tem perature (SO D-123) t rr t rr R thJA çV 0.45 4 2 450 (1) Sym bol VF Min Typ Max 1.0 Unit V IR IR V (BR)R 75 50 50 nA A V A pulses C tot 2 pF ns ns /W 2 www.kexin.com.cn