2SC4942

S MD Type NPN Silicon Transistors 2SC4942 Transistors Features New package with dimensions in between those of small signal and power signal package High voltage Fast switching speed Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature *1 PW 10 ms, duty cycle 2 Symbol VCBO VCEO VEBO ID(DC) ID(pulse) *1 PT *2 Tj Tstg Rating 600 600 7 1 2 2 150 -55 to 150 Unit V V V A A W 50 % *2 7.5 cm X 0.7 mm ceramic board mounted Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tstg tf Testconditons VCB = 600 V, IE = 0 VEB = 7.0 V, IC = 0 VCE = 5.0 V, IC = 0.1 A VCE = 5.0 V, IC = 0.5 A IC = 400 mV, IB = 80 mA IC = 400 mV, IB = 80 mA VCE = 5.0 V, IE = ?50 mA VCB = 10 V, IE = 0, f = 1.0 MHz IC = 0.5 A, VCC= 250 V IB1 = ?IB2 = 0.1 A RL = 500Ù 30 5 55 10 0.35 0.9 30 15 0.1 4.0 0.2 0.5 5.0 0.5 1.0 1.2 V V MHz pF ìs ìs ìs Min Typ Max 10 10 120 Unit ìA ìA hFE Classification Marking hFE AA1 30 to 60 AA2 40 to 80 AA3 60 to120 www.kexin.com.cn 1