2SD1963

S MD Type Power Transistor 2SD1963 Transistors Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 20 6 3 0.5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=50ìA IC=1mA IE=50ìA VCB=40V VEB=5V VCE=2V, IC=0.5A 180 0.25 150 35 Testconditons Min 50 20 6 0.5 0.5 560 0.45 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC=1.5 A, IB=0.15A fT Cob VCE=6V, IE= -50mA, f=100MHz VCB=20V, IE=0A, f=1MHz hFE Classification Marking Rank hFE R 180 390 DG S 270 560 www.kexin.com.cn 1