ER1J

MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# ER1A THRU ER1M 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts DO-214AA (SMBJ) (Round Lead) H Cathode Band • • • • •







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Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250 °C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Operating Temperature: -50 °C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 15 °C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ER1A ER1A 50V 35V 50V ER1B ER1B 100V 70V 100V ER1C ER1C 150V 105V 150V ER1D ER1D 200V 140V 200V ER1G ER1G 400V 280V 400V ER1J ER1J 600V 420V 600V ER1K ER1K 800V 560V 800V ER1M ER1M 1000V 700V 1000V IF(AV) IFSM 1.0A 30A TJ = 75°C 8.3ms, half sine DIM A B C D E F G H J Maximum Ratings • • • J A C E F G D B Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage INCHES MIN .078 .075 .002 ----.035 .065 .205 .160 .130 MAX .116 .089 .008 .02 .055 .091 .224 .180 .155 DIMENSIONS MM MIN 1.98 1.90 .05 ----.90 1.65 5.21 4.06 3.30 MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94 NOTE ER1A-D ER1G-K ER1M VF .975V 1.35V 1.60V IFM = 1.0A; TJ = 25°C* TJ = 25°C TJ = 100°C Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time SUGGESTED SOLDER PAD LAYOUT 0.090" IR 5µA 100µA 0.085” ER1A-D ER1G-K ER1M Trr CJ 50ns 60ns 100ns Typical Junction Capacitance 45pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V 0.070” *Pulse test: Pulse width 200 µsec, Duty cycle 2% www.mccsemi.com ER1A thru ER1M Figure 1 Typical Forward Characteristics 20 10 6 4 2 Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .2 .4 .6 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts .8 1.0 1.2 Amps 2.4 2.2 2.0 1.8 25°C 1.6 1.4 1.2 1.0 .8 .6 .4 Figure 2 Forward Derating Curve MCC Single Phase, Half Wave .2 60Hz Resistive or Inductive Load 0 0 25 50 75 °C Average Forward Rectified Current - Amperes ersus v Ambient Temperature - °C 100 125 150 Figure 3 Junction Capacitance 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25°C Junction Capacitance - pFversus Reverse Voltage - Volts www.mccsemi.com ER1A thru ER1M Figure 4 Peak Forward Surge Current 30 25 20 15 Amps 10 5 0 1 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100 MCC Figure 5 New SMB Assembly Round Lead Process 2 Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Ω 10Ω trr +0.5A 0 25Vdc Pulse Generator Note 2 1Ω Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive www.mccsemi.com