MBR1050CT

MCC Features • • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR1030CT THRU MBR1060CT 10 Amp Schottky Barrier Rectifier 30-60 Volts TO-220AB Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency High surge capacity, High current capability Maximum Ratings • • Operating Temperature: -55 °C to +150°C Storage Temperature: -55°C to +175°C Device Marking Maximum Recurrent Peak Reverse Voltage 30V 35V 40V 45V 50V 60V Maximum RMS Voltage Maximum DC Blocking Voltage 30V 35V 40V 45V 50V 60V Microsemi Catalog Number B C K PIN 1 2 3 L M D A E MBR1030CT MBR1035CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT MBR1030CT MBR1035CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT 21V 24.5V 28V 31.5V 35V 42V F G I J N HH PIN 1 PIN 2 CASE Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Forward Voltage Drop Per Element MBR1030CT-45CT MBR1050CT-60CT MBR1030CT-45CT MBR1050CT-60CT Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance MBR1030CT-45CT MBR1050CT-60CT IF(AV) IFSM 10A 125A TC = 105°C 8.3ms, half sine PIN 3 
 MM  14.22 9.65 2.54 5.84 9.65 -----12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03  15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92   VF .70V .80V .57V .65V 0.1mA 15mA IFM = 5A TJ = 25°C IFM = 5A TJ = 125°C TJ = 25°C T J = 125°C IR
 A B C D E F G H I J K L M N INCHES   .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -----.250 .500 .580 .090 .110 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115 CJ 170pF 220pF Measured at 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 µsec, Duty cycle 2% www mccsemi.com . RATING AND CHARACTERISTIC CURVES MBR1030CT thru MBR1060CT PEAK FORWARD SURGE CURRENT, AMPERES MCC FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 16 12 8 4 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 10 TJ = 125 C MBR1030CT ~ MBR1045CT 10 1.0 MBR1050CT ~ MBR1060CT 0.1 1.0 0.01 TJ = 25 C TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.001 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) INSTANTANEOUS INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 MBR1030CT ~ MBR1045CT CAPACITANCE , (pF) 100 MBR1050CT ~ MBR1060CT TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS www.mccsemi.com