MCAC70N15YHE3-TP

MCAC70N15YHE3 Features • • • • • • • AEC-Q101 Qualified Split Gate Trench MOSFET Technology Low Thermal Resistance Moisture Sensitivity Level 1 Halogen Free. “Green” Device (Note 1) Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • • • • Operating Junction Temperature Range : -55°C to +175°C Storage Temperature Range: -55°C to +175°C Thermal Resistance: 50°C/W Junction to Ambient(Note 2) Thermal Resistance: 1.0°C/W Junction to Case Parameter DFN5060 Symbol Rating Unit 'UDLQ6RXUFH9ROWDJH 9'6 150 9 *DWH6RXUFH9ROOWDJH 9*6 ±20 9 &RQWLQXRXV'UDLQ&XUUHQW TC=25°C ,' TC=100°C 70 A $ 49 3XOVHG'UDLQ&XUUHQWNote ,'0 280 $ 7RWDO3RZHU'LVVLSDWLRQNote 3' 150 : 6LQJOH3XOVHG$YDODQFKH(QHUJ\Note ($6 81 P- H D B • J PIN 1 G C N E F 1RWH  +DORJHQIUHH*UHHQ´SURGXFWVDUHGHILQHGDVWKRVHZKLFKFRQWDLQSSPEURPLQH SSPFKORULQHSSPWRWDO%U&ODQGSSPDQWLPRQ\FRPSRXQGV  7KHYDOXHRI5ș-$LVPHDVXUHGZLWKWKHGHYLFHPRXQWHGRQLQ)5ERDUGZLWKR] K L M &RSSHULQDVWLOODLUHQYLURQPHQWZLWK7$ ƒ&  5HSHWLWLYHUDWLQJSXOVHZLGWKOLPLWHGE\PD[MXQFWLRQWHPSHUDWXUH  3'LVEDVHGRQPD[MXQFWLRQWHPSHUDWXUHXVLQJMXQFWLRQFDVHWKHUPDOUHVLVWDQFH  7- ǔ9'' 5099*6 109/ 0.5P+. DIM Internal Structure and Marking Code 8 D 8 D 7 7 6 5 D D 5 6 MCC MCAC70N15Y YYWW 1 S 2 S 3 S 4 G 1 Rev.4-2-12262023 4 codes in total YY is the year WW is the week 2 3 4 1/6 A B C D E F G H K J L M N DIMENSIONS INCHES MM MIN MAX MIN MAX 0.031 0.047 0.80 1.20 0.010 0.254 0.193 0.222 4.90 5.64 0.232 0.250 5.90 6.35 0.148 0.167 3.75 4.25 0.126 0.154 3.20 3.92 0.189 0.213 4.80 5.40 0.222 0.239 5.65 6.06 0.045 0.059 1.15 1.50 0.012 0.020 0.30 0.50 0.046 0.054 1.17 1.37 0.012 0.028 0.30 0.71 0.016 0.028 0.40 0.71 NOTE TYP. MCCSEMI.COM MCAC70N15YHE3 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=120V, VGS=0V 1 µA Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 2.9 4.0 V Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 13 17 VGS=6V, ID=10A 17 22 f=1MHz, Open Drain 0.9 Drain-Source Breakdown Voltage Gate Resistance Rg 150 2.0 V mΩ Ω Diode Characteristics Continuous Body Diode Current IS Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS=0V, IS=20A IF=20A,dlSD/dt=100A/μs 70 A 1.2 V 93 ns 214 nC Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 7 Total Gate Charge Qg 40 Gate-Source Charge Qgs Gate-Drain Charge Qgd 11 Turn-On Delay Time td(on) 15 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Rev.4-2-12262023 2527 VDS=75V,VGS=0V,f=1MHz VDS=75V,VGS=10V,ID=20A VDD=75V,VGS=10V, RG=4.5Ω, IDS=20A tf 207 10 14 29 pF nC ns 13 2/6 MCCSEMI.COM MCAC70N15YHE3 &XUYH&KDUDFWHULVWLFV Fig. 1 - Typical Output Characteristics 150 Fig. 2 - Transfer Characteristics 150 VDS=5V VGS=10V,8V,7V Drain Current (A) Drain Current (A) VGS=6V 90 60 VGS=5V 30 0 90 1 2 3 150°C 60 30 VGS=4.5V 0 25°C 120 120 4 0 5 0 2 Drain To Source Voltage (V) Fig. 3 - RDS(ON)—VGS ID=20A 125℃ 30 20 25℃ 10 4 5 6 7 10 8 9 24 12 VGS=10V 6 0 10 VGS=6V 18 Gate To Source Voltage (V) 0 10 20 30 40 50 40 50 Drain Current(A) Fig. 5 - Capacitance Characteristics 10000 8 Fig. 4 - RDS(ON)—ID 40 0 6 30 Drain-Source on Resistance (mΩ) Drain-Source On-Resistance (mΩ) 50 4 Gate To Source Voltage (V) Fig. 6 - Gate Charge 10 VDS=75V IDS=20A Capacitance (pF) Gate-Source Voltage (V) Ciss 1000 Coss 100 10 8 6 4 2 Crss 1 0 Rev.4-2-12262023 30 60 90 Drain To Source Voltage (V) 120 0 150 0 10 20 30 Gate Charge(nC) 3/6 MCCSEMI.COM MCAC70N15YHE3 &XUYH&KDUDFWHULVWLFV Fig. 7 - Nomalized Threshold Voltage 2.5 Fig.8-Normalized On Resistance Characteristics VGS=10V 1.2 Normalized On Resistance VGS(th)-Threshold Voltage Nomalized 1.4 ID=250uA 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 2.0 1.5 1.0 0.5 0.0 -50 175 ID=20A -25 0 25 Fig. 9 - IS—VSD 100 50 75 100 125 150 175 Tj-Junction Temperature(°C) Tj-Junction Temperature (℃) Fig. 10 - Drain Current 80 VGS=0V 150°C ID-Drain Current (A) Source Current (A) 10 25°C 1 0.1 60 40 20 0.01 0.0 0.4 0.2 0.6 0.8 1.0 0 0 1.2 Source To Drain Voltage (V) 25 50 75 100 TC Temperature (℃) 125 150 175 Fig.11-PD Dissipation 200 Power Dissipation (W) 160 120 80 40 0 0 25 50 75 100 125 150 175 TC Temperature (°C) Rev.4-2-12262023 4/6 MCCSEMI.COM MCAC70N15YHE3 &XUYH&KDUDFWHULVWLFV Fig. 12 - Safe Operation Area 10000 Drain Current(A) 1000 100 RDS(on) Limited 10us 10 100us 1ms 10ms DC 1 0.1 TJ(MAX)=175℃ TC=25°C Single Pulse 0.01 0.1 Zth(J-C) Normalized Transient Thermal Resistance 10 1 10 Drain-Source Voltage (V) 100 1000 Fig. 13 - Normalized Transient Thermal Impedance D=Ton/T In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse TJ,PK=TC+PDMꞏZθJCꞏRθJC 1 RθJC=1.0°C/W 0.1 Single Pulse PDM 0.01 1E-3 1E-6 TON 1E-5 1E-4 1E-3 0.01 T 0.1 1 Pulse Width (s) Rev.4-2-12262023 5/6 MCCSEMI.COM MCAC70N15YHE3 Ordering Information Device Packing Part Number-TP Tape&Reel: 5Kpcs/Reel ***IMPORTANT NOTICE*** Micro Commercial Components Corp UHVHUYHV WKH ULJKW WR PDNH FKDQJHV ZLWKRXW IXUWKHU QRWLFH WR DQ\ SURGXFW KHUHLQ WR PDNH FRUUHFWLRQV PRGLILFDWLRQV  HQKDQFHPHQWV  LPSURYHPHQWV  RU RWKHU FKDQJHV  Micro Commercial Components Corp  GRHV QRW DVVXPH DQ\ OLDELOLW\ DULVLQJ RXW RI WKH DSSOLFDWLRQ RU XVH RI DQ\ SURGXFW GHVFULEHG KHUHLQ QHLWKHU GRHV LW FRQYH\DQ\OLFHQVHXQGHULWVSDWHQWULJKWVQRUWKHULJKWVRIRWKHUV7KHXVHURISURGXFWVLQVXFKDSSOLFDWLRQVVKDOODVVXPHDOO ULVNVRIVXFKXVHDQGZLOODJUHHWRKROGMicro Commercial Components Corp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ev.4-2-12262023 6/6 MCCSEMI.COM