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1N3156E3

1N3156E3

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N3156E3 - 8.4 Volt Temperature Compensated Zener Reference Diodes - Microsemi Corporation

  • 数据手册
  • 价格&库存
1N3156E3 数据手册
1N3154 thru 1N3157, A, -1, e3 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION DESCRIPTION The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes provides a selection of 8.4 V nominal voltages and temperature coefficients to as low as 0.001 %/oC for minimal voltage change with temperature when operated at 10.0 mA. These glass axial-leaded DO-7 reference diodes are also available in JAN, JANTX, and JANTXV military qualifications. As a further option for commercial product, they are available as RoHS Compliant with an e3 suffix added to the part number. Microsemi also offers numerous other Zener Reference Diode products for a variety of other voltages from 6.2 V to 200 V. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W WW . Microsemi . C OM DO-7 (DO-204AA) FEATURES • JEDEC registered 1N3154 thru 1N3157A series • Standard reference voltage of 8.4V +/- 5% with tighter tolerances available • 1N3154, 3155, 3156, and 3157 also have military qualification to MIL-PRF-19500/158 up to the JANTXV level by adding JAN, JANTX, or JANTXV prefixes to part numbers as well as “-1” suffix, e.g. JANTX1N3157-1, etc. • Internal metallurgical bonds • JANS Equivalent available via SCD • Radiation Hardened devices available by changing 1N prefix to RH, e.g. RH3156, RH3157, RH3157A, etc. Also consult factory for “RH” data sheet brochure • RoHS Compliant devices available by adding an “e3” suffix (not applicable to military) • • • • APPLICATIONS / BENEFITS Provides minimal voltage changes over a broad temperature range For instrumentation and other circuit designs requiring a stable voltage reference Maximum temperature coefficient selections available from 0.01%/ºC to 0.001%/ºC Tight reference voltage tolerances at the 8.4 V nominal is available by adding tolerance 1%, 2%, 3%, etc. after the part number for identification e.g. 1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc. Flexible axial-lead mounting terminals Nonsensitive to ESD per MIL-STD-750 Method 1020 • • MAXIMUM RATINGS • Operating & StorageTemperature: -65 C to +175 C • DC Power Dissipation: 500 mW @ TL = 25oC and maximum current IZM of 55 mA. NOTE: For optimum voltage-temperature stability, IZ = 10.0 mA (less than 90 mW in dissipated power) • Solder temperatures: 260 oC for 10 s (maximum) o o MECHANICAL AND PACKAGING • CASE: Hermetically sealed glass case with DO-7 (DO-204AA) package • TERMINALS: Tin-Lead (military) or RoHS Compliant annealed matte-Tin plating solderable per MIL-STD750, Method 2026 • MARKING: Part number and cathode band • POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end • TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number) • WEIGHT: 0.2 grams. • See package dimensions on last page 1N3154 - 1N3157A, e3 Copyright © 2005 7-18-2005 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N3154 thru 1N3157, A, -1, e3 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION W WW . Microsemi . C OM *ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified JEDEC TYPE NUMBERS (Notes 1, 5 & 6) ZENER VOLTAGE VZ @ IZT (Note 1) VOLTS ZENER TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE (Note 2) ZZT OHMS MAXIMUM REVERSE CURRENT IR @ 5.5 V VOLTAGE TEMPERATURE STABILITY (Note 3 & 4) ΔVZT MAXIMUM mV EFFECTIVE TEMPERATURE COEFFICIENT αVZ %/ C o TEMPERATURE RANGE 1N3154 1N3154A 1N3155 1N3155A 1N3156 1N3156A 1N3157 1N3157A 8.00-8.80 8.00-8.80 8.00-8.80 8.00-8.80 8.00-8.80 8.00-8.80 8.00-8.80 8.00-8.80 10 10 10 10 10 10 10 10 15 15 15 15 15 15 15 15 μA 10 10 10 10 10 10 10 10 o C 130 172 65 86 26 34 13 17 -55 to +100 -55 to +150 -55 to +100 -55 to +150 -55 to +100 -55 to +150 -55 to +100 -55 to +150 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 *JEDEC Registered Data. NOTES: 1. 2. 3. 4. 5. 6. When ordering devices with tighter tolerance than specified, add a hyphenated suffix to the part number for desired tolerance, e.g. 1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc. o Measured by superimposing 1.0 mA ac rms on 10 mA dc @ 25 C. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV change at any discrete temperature between the established limits. Voltage measurements to be performed 15 seconds after application of dc current. The 1N3154, 1N3155, 1N3156, and 1N3157 also have military qualification to MIL-PRF-19500/158 up to the JANTXV level by adding JAN, JANTX, or JANTXV prefix to part numbers as well as “-1” suffix, e.g. JANTX1N3156-1, JANTXV1N3157-1, etc. Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH3157A instead of 1N3157A. GRAPHS Change in temperature coefficient (mV/ C) The curve shown in Figure 1 is typical of the diode series and greatly simplifies the estimation of the Temperature Coefficient (TC) when the diode is operated at currents other than 10mA. EXAMPLE: A diode in this series is operated at a current of 10mA and has specified Temperature Coefficient (TC) limits of o +/-0.005%/ C. To obtain the typical Temperature Coefficient limits for this same diode operated at a current of 7.5mA, the o new TC limits (%/ C) can be estimated using the graph in FIGURE 1. At a test current of 7.5mA the change in Temperature Coefficient o (TC) is approximately –0.0012%. C. The algebraic sum of +/o o 0.005% C and –0.0012%/ C gives the new estimated limits of +0.0038%/oC and -0.0062%/oC. Change in temperature coefficient (%/ C) o o 1N3154 - 1N3157A, e3 IZ – Operating Current (mA) FIGURE 1 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT. Copyright © 2005 7-18-2005 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N3154 thru 1N3157, A, -1, e3 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION W WW . Microsemi . C OM ΔVZ – Change in Zener Voltage (mV) This curve in Figure 2 illustrates the change of diode voltage arising from the effect of impedance. It is in effect, an exploded view of the zener operating region of the I-V characteristic. In conjunction with Figure 1, this curve can be used to estimate total voltage regulation under conditions of both varying temperature and current. IZ – Operating Current (mA) FIGURE 2 TYPICAL CHANGE OF ZENER VOLTAGE WITH CHANGE IN OPERATING CURRENT. DIMENSIONS 1N3154 - 1N3157A, e3 All dimensions in INCH mm Copyright © 2005 7-18-2005 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3
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