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1N4150-1

1N4150-1

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N4150-1 - Silicon Switching Diode DO-35 Glass Package - Microsemi Corporation

  • 数据手册
  • 价格&库存
1N4150-1 数据手册
Silicon Switching Diode 1N4150 Applications 11NNor1 or 1N4150-1 1N DO-35 Glass Package Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features DO-35 Glass Package La dDa . e i 0. 1 - . 2 " 0 80 0 2 0. 5 - . 5 m m 4 80 5 8 Six sigma quality Metallurgically bonded BKC's Sigma Bond™ plating 1.0" Length for problem free solderability 25.4 mm mm (Min.) LL-34/35 MELF SMD available Full approval to Mil-S-19500/231 Available up to JANTXV-1 levels "S" level screening available to Source Control Drawings 0.120-.200" 3.05-5.08- Dia. 0.06-0.09" 15 - . 8m m . 322 M a xi u m Ra ti g s m n Pea k I nvers e Volta g e Average Rectified Current Continuous Forward Current Peak Surge Current (tpeak = 1 sec.) BKC Power Dissipation TL=50 oC, L = 3/8" from body Operating Temperature Range Storage Temperature Range El ectri l Cha ra cteri t cs @ 25 o C ca si Forw a rd Volta g e Drop @ I = 1.0 m A F Forw a rd Volta g e Drop @ I = 1 0 m A F Forw a rd Volta g e Drop @ I = 5 0 m A F Forw a rd Volta g e Drop @ I = 1 0 0 m F Forw a rd Volta g e Drop @ I = 2 0 0 m A F Revers e Lea k a g e Cu rrent @ VR = 5 0 V Brea k dow n Vola g e @ I = 0 .1 m A t r Ca pa ci nce @ VR = 0 V, f = 1m Hz ta Revers e Recovery tim e (note 1) Revers e Recovery tim e (note 2,3) Forw a rd Recovery tim e (note 4) Sym bol VF VF VF VF VF I r PIV CT trr trr V fr Sym b o l PI V IAvg IFdc Ipeak Ptot TOp TSt Mi i u m nm 0 .54 0 .66 0 .76 0 .80 0 .87 75 Va l e u 75 (M in.) 200 400 0.5 500 -65 to +200 -65 to +200 M a xi u m m 0 .62 0 .74 0 .86 Unt i Volts mAmps mAmps Amp mWatts o C o C Unt i Volts Volts Volts Volts Volts µA Volts pF nS e c s nS e c s nS e c s 0 .92 1.0 0 .1 (10 0 @ 150 2.5 4.0 6.0 10 o C) Note 1: Per Method 4031-A with IF = IR = 10 to 200 mA, RL = 100 Ohms,recover to 0.1 If. Note 2: Per Method 4031-A with IF = IR = 200 to 400 mA, RL = 100 Ohms,recover to 0.1 If. Note 3: Per Method 4031-A with IF = 10 microA, Ir = 1.0 mA, recover to 0.1 mA. Note 4: Per Method 4026 with IF = 200 mA, Ir = 1.0 mA, recover to 0.1 mA. 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135
1N4150-1 价格&库存

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