1N5552US

1N5550US thru 1N5554US VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This “standard recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/420 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 5.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1N5550 thru 1N5554). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speeds. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W WW . Microsemi . C OM Package “E” or D-5B FEATURES • Surface mount package series equivalent to the JEDEC registered 1N5550 to 1N5554 series • Voidless hermetically sealed glass package • Extremely robust construction • Triple-layer passivation • Internal “Category I” Metallurgical bonds • JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/420 • Axial-leaded equivalents also available (see separate data sheet for 1N5550 thru 1N5554) APPLICATIONS / BENEFITS • Standard recovery 5 Amp rectifiers 200 to 1000 V • Military and other high-reliability applications • General rectifier applications including bridges, halfbridges, catch diodes, etc. • High forward surge current capability • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS • • • • • Junction Temperature: -65 C to +200 C Storage Temperature: -65oC to +175oC Thermal Resistance: 11oC/W junction to endcap Thermal Impedance: 1.5oC/W @ 10 ms heating time Average Rectified Forward Current (IO): 5 Amps @ TEC = 55ºC (see Note 1) • Forward Surge Current (8.3 ms half sine): 100 Amps • Solder temperatures: 260oC for 10 s (maximum) o o MECHANICAL AND PACKAGING • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINALS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead (Sn/Pb) finish. • MARKING: Cathode band only • POLARITY: Cathode indicated by band • TAPE & REEL option: Standard per EIA-481-B • WEIGHT: 539 mg • See package dimensions and recommended pad layout on last page AVERAGE RECTIFIED CURRENT IO2 @ o TA=+55 C Note 2 AMPS ELECTRICAL CHARACTERISTICS TYPE MINIMUM BREAKDOWN VOLTAGE VBR @50μA VOLTS WORKING PEAK REVERSE VOLTAGE VRWM VOLTS AVERAGE RECTIFIED CURRENT IO1 @ FORWARD VOLTAGE VF @ 9A (pk) MIN. VOLTS MAX. VOLTS REVERSE CURRENT IR @ VRWM μA REVERSE RECOVERY trr Note 3 μs 1N5550US – 1N5554US TEC=+55 C o Note 1 AMPS 1N5550US 220 200 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0 1N5551US 440 400 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0 1N5552US 660 600 5 3 0.6V (pk) 1.2V (pk) 1.0 2.0 1N5553US 880 800 5 3 0.6V (pk) 1.3V (pk) 1.0 2.0 1N5554US 1100 1000 5 3 0.6V (pk) 1.3V (pk) 1.0 2.0 NOTE 1: Derate linearly at 66.6 mA/ºC above TEC = 100ºC. An IO of up to 6 Amps is allowable provided that appropriate heat sinking or forced air cooling maintains the junction temperature at or below +200C. NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficient controlled where TJ(MAX) rating is not exceeded. NOTE 3: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A Copyright © 2006 11-27-2006 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5550US thru 1N5554US VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION W WW . Microsemi . C OM Symbol VBR VRWM IO VF IR trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Average Rectified Output Current: Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and then a specified recovery decay point after a peak reverse current occurs. PACKAGE DIMENSIONS AND PAD LAYOUT NOTE: This Package Outline has also previously been identified as “D-5B” INCHES MIN BL BD ECT S .205 .137 .019 .003 MAX .225 .142 .028 --MIN 5.21 3.48 0.48 0.08 mm MAX 5.72 3.61 0.711 --A B C PAD LAYOUT INCHES 0.288 0.070 0.155 mm 7.32 1.78 3.94 1N5550US – 1N5554US Note: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. Copyright © 2006 11-27-2006 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2