2N1131L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR Qualified per MIL-PRF-19500/177 DEVICES LEVELS 2N1131 2N1131L 2N1132 2N1132L JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C @ TC = +25°C (2) (1) Symbol VCEO VCBO VEBO IC PT TJ, Tstg Value 40 50 5.0 600 0.6 2.0 -65 to +200 Unit Vdc Vdc Vdc mAdc W °C TO-39 2N1131, 2N1132 Operating & Storage Junction Temperature Range NOTES: 1/ Derate linearly 3.43mW/°C for TA > +25°C 2/ Derate linearly 11.4mW/°C for TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector- Base Breakdown Voltage IC = 10µAdc Emitter-Base Cutoff Current VEB = 5.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc, RBE ≤ 10 ohms Collector-Base Cutoff Current VCB = 50Vdc VCB = 30Vdc Symbol Min. Max. Unit V(BR)CEO V(BR)CBO 40 Vdc Vdc TO-5 2N1131L, 2N1132L 50 100 10 IEBO µAdc mAdc ICER ICBO 10 1.0 µAdc T4-LDS-0187 Rev. 1 (101882) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERTICS (3) Forward-Current Transfer Ratio IC = 150mAdc, VCE = 10Vdc IC = 5.0mAdc, VCE = 10Vdc Collector-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc Base-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N1131, L 2N1132, L IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Open-Circuit Output Admittance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Short-Circuit Input Impedance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz Magnitude of Common Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 50mAdc, VCE = 10Vdc, f = 20MHz 2N1131, L 2N1132, L Output Capacitance VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Iutput Capacitance VEB = 0.5Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time + Turn-Off Time (See figure 2 of MIL-PRF-177) (3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% T4-LDS-0187 Rev. 1 (101882) Page 2 of 3 t Symbol Min. Max. Unit 2N1131, L 2N1132, L 2N1131, L 2N1132, L hFE 20 30 15 25 45 90 VCE(sat) VBE(sat) 1.3 Vdc Vdc 1.5 Symbol Min. 15 30 Max. 50 90 Unit 2N1131, L 2N1132, L hfe 20 30 1.0 5.0 25 35 10 hob µmho hib Ω |hfe| 2.5 3.0 20 20 4.5 80 pF pF Cobo Cibo Symbol on + toff Min. Max. 50 Unit ηs TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .050 1.27 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45° TP 45° TP Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Note 6 7, 8 7, 8, 12 7, 8 7, 8 7, 8 5 4 3 10 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. * For L-suffix or non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.. * FIGURE 1. Physical dimensions 2N1131 and 2N1132 ( TO-39), 2N1131L and 2N1132L (TO-5). T4-LDS-0187 Rev. 1 (101882) Page 3 of 3