2N4150

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C @ TC = +25°C (2) (1) Symbol VCEO VCBO VEBO IC PT Tj , Tstg RθJC RθJA 2N4150 2N4150S 70 100 2N5237 2N5237S 120 150 10 10 1.0 15 -65 to +200 10 175 2N5238 2N5238S 170 200 Unit Vdc Vdc Vdc Adc W °C °C/W TO-5 2N4150, 2N5237, 2N5238 Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case Junction- to Ambient 1) 2) Derate linearly @ 5.7mW/°C for TA > +25°C Derate linearly @ 100mW/°C for TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 0.1mAdc Symbol Min. Max. Unit 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S V(BR)CEO 70 120 170 Vdc Collector-Emitter Cutoff Current VBE = 0.5Vdc, VCE = 60Vdc VBE = 0.5Vdc, VCE = 110Vdc VBE = 0.5Vdc, VCE = 160Vdc Collector-Emitter Cutoff Current VCE = 60Vdc VCE = 110Vdc VCE = 160Vdc Emitter-Base Cutoff Current VEB = 7.0Vdc VEB = 5.0Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEX 10 10 10 µAdc TO-39 (TO-205AD) 2N4150S, 2N5237S, 2N5238S µAdc ICEO 10 10 10 10 0.1 IEBO µAdc T4-LDS-0014 Rev. 4 (082192) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions Collector-Base Cutoff Current VCB = 100Vdc VCB = 150Vdc VCB = 200Vdc VCB = 80Vdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc IC = 10Adc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Base-Emitter Saturation Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.2Adc, VCE = 10Vdc, f = 10MHz Forward Current Transfer Ratio IC = 50mAdc, VCE = 5.0V, f = 1.0kHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Delay Time Rise Time Storage Time Fall Time SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1.0s Test 1 VCE = 40Vdc, IC = 0.22Adc Test 2 VCE = 70Vdc, IC = 90mAdc Test 3 VCE = 120Vdc, IC = 15mAdc 2N5237, 2N5237S VCE = 170Vdc, IC = 3.5mAdc 2N5238, 2N5238S (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0014 Rev. 4 (082192) Page 2 of 2 VCC = 20Vdc, VBB = 5.0Vdc IC = 5.0Adc, IB1 = 0.5Adc VCC = 20Vdc, VBB = 5.0Vdc IC = 5.0Adc, IB1 = -IB2 = -0.5Adc Symbol td tr ts tf Min. Max. 50 500 1.5 500 Unit ns ns µs ns 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Symbol |hfe| Min. 1.5 Max. 7.5 Unit 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types Symbol Min. Max. 10 10 10 0.1 Unit ICBO µAdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types All Types hFE 50 50 50 40 10 200 225 225 120 0.6 2.5 1.5 25 Vdc Vdc VCE(sat) VBE(sat) hfe 40 40 40 160 160 250 350 pF Cobo