2N5793

TECHNICAL DATA NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/495 Devices 2N5793 2N5794 2N5794U Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 One Total Section(1) Device(2) 0.5 0.6 -65 to +200 Units Vdc Vdc Vdc mAdc TO-78* Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 3.43 mW/0C for TA > +250C PT Top, Tstg 0 W C 6 PIN SURFACE MOUNT* *See MILPRF19500/495 for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 40 Max. Unit Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 75 Vdc VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc VEB = 4.0 Vdc 10 10 10 10 µAdc ηAdc µAdc ηAdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 1 of 2 2N5793, 2N5794 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 300 mAdc, IB = 30 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 300 mAdc, IB = 30 mAdc 2N5793 hFE 20 25 35 40 25 20 35 50 75 100 40 50 120 2N5794 2N5794U hFE 300 VCE(sat) 0.3 0.9 0.6 1.2 1.8 10 8.0 33 Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe Cobo Cibo t t 2.0 pF pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = 15 mAdc, VBE(off) = 0.5 Vdc Turn-Off Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. on 45 310 ηs ηs off 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 2 of 2