0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
APT60D60B

APT60D60B

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    APT60D60B - ULTRAFAST SOFT RECOVERY RECTIFIER DIODE - Microsemi Corporation

  • 数据手册
  • 价格&库存
APT60D60B 数据手册
600V APT60D60B APT60D60BG* 60A APT60D60S APT60D60SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses • Low Noise Switching 1 2 -2 4 7 D3PAK • Cooler Operation • Popular TO-247 Package or Surface Mount D3PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • Increased System Power Density 1 2 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT60D60B_S(G) UNIT 600 Volts Maximum Average Forward Current (TC = 135°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 60 132 600 -55 to 175 300 °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://www.microsemi.com VR = 600V VR = 600V, TJ = 125°C MIN TYP MAX UNIT 1.6 1.9 1.4 1.8 Volts 250 500 90 µA pF 6-2006 053-6001 Rev I DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 60A, diF/dt = -1000A/µs VR = 400V, TC = 125°C IF = 60A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 60A, diF/dt = -200A/µs VR = 400V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN TYP APT60D60B_S(G) MAX UNIT ns nC 40 130 220 4 170 920 10 80 1900 38 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g .34 40 0.22 5.9 10 1.1 lb•in N•m Torque Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 0.25 0.20 0.15 0.10 0.05 0 10 0.3 D = 0.9 0.7 0.5 Note: PDM t1 t2 0.1 0.05 -5 SINGLE PULSE 10 -4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) 6-2006 0.129 Dissipated Power (Watts) 0.0107 0.120 TC (°C) 0.211 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 053-6001 Rev I FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 200 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 125°C TJ = 25°C TJ = 150°C TJ = -55°C trr, REVERSE RECOVERY TIME (ns) 200 180 160 140 120 100 80 60 40 20 120A 60A APT60D60B_S(G) T = 125°C J V = 400V R 30A 0.5 1 1.5 2 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 2500 Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 400V R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 40 35 30 25 20 15 10 5 0 T = 125°C J V = 400V R 0 120A 2000 120A 60A 1500 60A 30A 1000 30A 500 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 140 120 IF(AV) (A) 100 80 60 Duty cycle = 0.5 T = 175°C J trr Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.0 0.8 0.6 0.4 0.2 0.0 Qrr trr IRRM Qrr 40 20 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 700 CJ, JUNCTION CAPACITANCE (pF) 600 500 400 300 200 100 0 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1 053-6001 Rev I 6-2006 Vr +18V 0V D.U.T. 30µH diF /dt Adjust APT60M75L2LL APT60D60B_S(G) trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D PAK Package Outline e3 100% Sn 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 13.30 (.524) 13.60(.535) 3 Cathode (Heat Sink) 1.00 (.039) 1.15(.045) Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 18.70 (.736) 19.10 (.752) 0.40 (.016) 0.65 (.026) 12.40 (.488) 12.70 (.500) 4.50 (.177) Max. 6-2006 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) 2.40 (.094) 2.70 (.106) (Base of Lead) 053-6001 Rev I Anode 2.21 (.087) 2.59 (.102) Heat Sink (Cathode) and Leads are Plated Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Anode Cathode Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
APT60D60B 价格&库存

很抱歉,暂时无法提供与“APT60D60B”相匹配的价格&库存,您可以联系我们找货

免费人工找货