APT60DQ60S

600V 60A APT60DQ60B APT60DQ60S APT60DQ60BG* APT60DQ60SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (B) TO PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses • Low Noise Switching 1 2 -2 4 7 D3PAK • Cooler Operation • Popular TO-247 Package or Surface Mount D3PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated • Increased System Power Density 1 2 (S) 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT60DQ60B_S(G) UNIT 600 Volts Maximum Average Forward Current (TC = 110°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 60 94 600 20 -55 to 175 300 mJ °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C MIN TYP MAX UNIT 2.0 2.44 1.7 2.4 Volts 25 500 75 Microsemi Website - http://www.microsemi.com 053-4206 Rev B pF 7-2006 µA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 60A, diF/dt = -1000A/µs VR = 400V, TC = 125°C IF = 60A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 60A, diF/dt = -200A/µs VR = 400V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN - APT60DQ60B_S(G) TYP MAX UNIT ns nC 26 35 45 4 175 680 8 100 1380 26 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g .44 0.22 5.9 10 1.1 lb•in N•m Torque Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.45 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10 -5 D = 0.9 0.7 0.5 Note: PDM 0.3 t1 t2 0.1 0.05 10 -4 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) 7-2006 0.167 Dissipated Power (Watts) 0.00823 0.0931 TC (°C) 0.273 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 053-4206 Rev B FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 200 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 175°C trr, REVERSE RECOVERY TIME (ns) 300 250 200 60A 150 100 50 0 120A APT60DQ60B_S(G) T = 125°C J V = 400V R 30A TJ = 125°C TJ = 25°C TJ = -55°C 0.5 1 1.5 2 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 2000 Qrr, REVERSE RECOVERY CHARGE (nC) 1800 1600 1400 1200 1000 800 600 400 200 0 T = 125°C J V = 400V R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30 25 20 15 10 5 0 T = 125°C J V = 400V R 120A 120A 60A 60A 30A 30A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Qrr trr IRRM trr Qrr 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 120 100 80 IF(AV) (A) 60 40 20 0 Duty cycle = 0.5 T = 175°C J 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 350 CJ, JUNCTION CAPACITANCE (pF) 300 250 200 150 100 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 25 50 053-4206 Rev B 7-2006 Vr +18V 0V D.U.T. 30µH diF /dt Adjust APT60GT60BR APT60DQ60B_S(G) trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 6 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 0.25 IRRM Slope = diM/dt 5 6 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D PAK Package Outline e3 100% Sn 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 13.30 (.524) 13.60(.535) 3 Cathode (Heat Sink) 1.00 (.039) 1.15(.045) Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 18.70 (.736) 19.10 (.752) 0.40 (.016) 0.65 (.026) 12.40 (.488) 12.70 (.500) 7-2006 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) 2.40 (.094) 2.70 (.106) (Base of Lead) 053-4206 Rev B Anode 2.21 (.087) 2.59 (.102) Heat Sink (Cathode) and Leads are Plated Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Anode Cathode Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.