GC4941-12

GC4902 – GC4946 TM ® CONTROL DEVICES – BEAMLEAD PIN DIODES RoHS Compliant KEY FEATURES  Wide Bandwidth / High Switching Speed DESCRIPTION Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base width, a high quality intrinsic ‘I’ layer that provides low loss, high isolation and ultra high speed switching characteristics. This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. www.MICROSEMI.com  5 Gram Typical Pull Strength  Very Low RS/CJ (Loss/Isolation) Products with Low Inductance  High Quality, High Resistivity Epitaxy  Stable Low Leakage Passivation with Rugged Glass Body  RoHS Compliant 1 1 APPLICATIONS These high speed beam lead PIN diodes are designed for stripline and microstrip circuits and are primarily used in shunt/series and conventional series multithrow configurations as switching, attenuating and phase shifting elements with frequencies extending up to Ku band. These devices are supplied with Gold plated terminations. Consult factory for details. APPLICATIONS/BENEFITS 1B  High Speed Switching  Broadband Performance  Suitable for Applications through 26 Ghz ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Maximum Leakage Current @80% of minimum Rated VB Operating Temperature Storage Temperature Symbol IR TOP TSTG Value 0.5 -65 to +150 -65 to +150 Unit uA ºC ºC For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com HU UH Specifications are subject to change, consult factory for the latest information. These devices are ESD sensitive and must be handled use using ESD precautions. GC4902 - GC4946 Copyright  2006 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GC4902 – GC4946 TM ® CONTROL DEVICES – BEAMLEAD PIN DIODES RoHS Compliant . ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) DC Characteristics RF Characteristics IL (db)1 IL (db)1 CT (pF) Rs (Ω) Rs (Ω) TL(nS) Isol (db)1 Vb (V) IF=10mA IF=50mA Model Number IR=10μA @10V Vr=10V IF=10mA IF=50mA F=2.2GHz F=2.2GHz (Min) (Max) (Typ) (Typ) (Typ) (Typ) (Max) (Max) GC4902 – 12 GC4903 – 12 GC4941 – 12 GC4942 – 12 GC4943 – 12 GC4944 – 12 GC4945 – 12 GC4946 – 12 100 100 50 50 50 50 50 50 0.025 0.030 0.060 0.040 0.030 0.025 0.022 0.020 3.0 2.5 1.5 2.0 3.0 3.5 5.5 6.5 80 80 50 45 40 35 40 40 29.0 27.8 22.0 25.0 27.5 29.0 30.5 31.0 0.26 0.22 0.13 0.17 0.26 0.30 0.46 0.55 www.MICROSEMI.com Notes: 1) Insertion loss and Isolation are test at F = 2.2 GHz using transmission loss techniques. PACKAGE STYLE 12 ELEC / MECH Copyright  2006 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2