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JAN2N4029

JAN2N4029

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    TO18-3

  • 描述:

    TRANSPNP80V1A

  • 数据手册
  • 价格&库存
JAN2N4029 数据手册
TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 Devices Qualified Level 2N4029 JAN JANTX JANTXV 2N4033 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VALUE Unit VCEO VCBO VEBO IC 80 80 5.0 1.0 Vdc Vdc Vdc Adc 1 Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range PT TJ, Tstg 2 2N4029 2N4033 0.5 0.8 -55 to +200 TO-18* (TO-206AA) 2N4029 W C 0 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 4.56 mW/0C for TA > +250C Symbol RθJC Max. 25.0 Unit C/W 0 TO-39* (TO-205AD) 2N4033 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit ICBO 10 10 µAdc ηAdc IEBO 25 10 µAdc ηAdc ICEX 25 ηAdc OFF CHARACTERISTICS Collector-Base Cutoff Current VCB = 80 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VBE = 5.0 Vdc VBE = 3.0 Vdc Collector-Emitter Cutoff Voltage VBE = 40 Vdc; VCE = 60 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N4029, 2N4033 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. hFE 50 100 70 25 Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 100 µAdc, VCE = 5.0 Vdc IC = 100 mAdc, VCE = 5.0 Vdc IC = 500 mAdc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc Base-Emitter Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc 300 0.15 0.50 1.0 VCE(sat) 0.9 1.2 VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 1.5 6.0 Cobo 20 pF Cibo 80 pF d 15 ηs t 25 ηs SWITCHING CHARACTERISTICS On-Time VCC = 31.9 Vdc; IC = 500 mAdc; IB1= 50 mAdc Rise Time VCC = 31.9 Vdc; IC = 500 mAdc; IB1 = 50 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 t r 120101 Page 2 of 2
JAN2N4029 价格&库存

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