MXP4002

PRELIMINARY MXP4000 Series OPTO ELECTRONIC PRODUCTS InGaAs/InP PIN Photodiode Chips P R O D UC T P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi . COM Microsemi’s InGaAs/InP PIN Photodiode chips are ideal for wide bandwidth 1310nm and 1550nm optical networking applications. The four devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 156 Mb/sec (active area of 300um2), 622 Mb/sec (active area of 200 um2), 2.5 Gb/sec (active area of 75 um2), 10 Gb/sec (active area of 40 um2), The MXP4000 series of photodiodes are originally offered in die form for manufacturers of optical transponders, supervisory VCSEL monitoring circuits, and combination PIN Photodiode-transimpedance amplifier hybrids. !" Low Dark Current !" Extremely low capacitance !" Wide bandwidth !" Fast response time APPLICATIONS/BENEFITS APPLICATIONS/BENEFIT APPLICATIONS/BENEFITS !" 1310nm Fiber Optic Applications !" 1550nm Fiber Optic Applications !" Optical Transponders IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Item Active Area(Dia.) Photo Sensitive Area Detection Range Responsivity Responsivity Dark Current Capacitance Rise/Fall Time Bandwidth Breakdown Voltage Chip Size Bonding Pad Size Sym PART RATINGS AND CHARACTERISTICS MXP4000 MXP4001 MXP4002 MXP4003 300 200 75 40 Unit µm Test Condition — Res Res ID C tr/tf VB 0.9 0.9 10 5.0 2 ns 0.156 20 0.020 x 0.020 100 0.85 0.9 4 2 0.5 ns 0.622 20 0.020 x 0.020 100 0.8 0.9 0.5 0.5 100 ps 2.5 20 0.014 x 0.014 40 0.8 0.9 0.2 0.2 20 ps 10 20 0.014 x 0.014 40 A/W A/W nA pF Gb/Sec V Inches um x um — Resp. @ 1300nm Resp. @ 1550nm VR @-5V IR @10uA MXP4000 S MXP4000 SERIES Copyright  2000 MSC1639.PDF 2000-12-12 Microsemi Opto Electronics Products Group 2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256 http://www.microsemi.com/opto Page 1