18MPA0567S11

17.0-22.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 18MPA0567 Chip Device Layout Features Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 17.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 22.0 dB with a +27.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (ΔS21) Reverse Isolation (S12) Saturated Output Power (Psat) Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=6.0V, Vg=-0.9V Typical) Units GHz dB dB dB dB dB dBm VDC VDC mA Min. 17.0 -1.0 Typ. 17.0 14.0 22.0 +/-0.5 50.0 +27.0 +5.0 -0.9 450 Max. 22.0 +8.0 0.1 480 Pr e- pr od Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) uc Absolute Maximum Ratings (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n +9.0 VDC 500 mA +0.3 VDC +17.0 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 Page 1 of 7 17.0-22.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 18MPA0567 Power Amplifier Measurements @ Tamb=25ºC 18MPA0567 S11 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 16 16.5 17 17. 5 18 18.5 19 19.5 20 20. 5 21 21.5 22 22. 5 2 3 Frequenc y (GH z) 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 16 18MPA0567 S21 16. 5 17 17.5 18 18. 5 19 19.5 20 20. 5 21 21.5 22 22. 5 2 3 Frequency (GHz) 18MPA0567 S12 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 pr 18 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 21.5 22 22.5 2 3 Frequency (GH z) 18MPA0567 @ VD=5, 5. 5 & 6 V Vd =6 V 30 25 Gain ( dB) & P- 1dB ( dBm ) eP- 1dB Vd =5 V od 16 16.5 17 17.5 18 18.5 19 19.5 20 20. 5 21 21.5 22 22. 5 2 3 Frequency (G Hz) Vd =5 V V d=5.5 V Pr 20 Ga in Vd =5. 5 V Vd =6 V 15 10 5 0 16 17 19 20 21 22 23 Frequenc y (GHz) uc 18MPA0567 S22 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n Page 2 of 7 17.0-22.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 18MPA0567 Power Amplifier Measurements (cont.) 18MP A0567 V D=5V , ID=550 m A wafer:042AA102 c ell:R 10C11 @ P in=+7dB m 30 29 28 27 26 Output P ower (dBm) Output P ower (dBm) 18MP A0567 V D=6V , IDQ =500 m A wafer:042AA102 c ell:R 10C11 @ P in=+7dB m 30 29 28 27 26 25 25 24 23 22 21 20 19 18 17 16 15 15 16 17 18 19 Fr e que nc y GH z 20 21 22 23 23 22 21 20 19 18 17 16 15 15 16 17 18 19 tio n 20 21 22 24 23 Fr e que nc y GH z 18MP A0567 V D=5.5V , IDQ =500 mA wafer:042AA102 c ell:R 10C 11 @ P in=+7dB m 30 29 28 27 26 Output P ower (dBm) 30 28 26 Psat 18MPA0567: linear g ain and P s at vs . Frequenc y. Vd = 5, 5. 5 an d 6V (10 sam ples) Line ar ga in (dB) and Ps at ( dBm) 24 22 20 18 16 14 12 10 25 24 23 22 21 20 19 18 17 16 od 8 6 4 2 0 16 Linear gain (-5 dB m) uc 18 056 7, VD_ R =5, Pin_ R=7 056 7, VD_ R =5.5, P in_R=7 056 7, VD_ R =6, Pin_ R=7 056 7, VD_ R =5, Pin_ R=-5 056 7, VD_ R =5.5, P in_R=-5 056 7, VD_ R =6, Pin_ R=-5 15 16 17 18 19 Fr e que nc y GH z 20 21 pr 22 15 23 17 19 20 21 22 23 Frequency ( GHz ) Pr e- Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 7 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-22.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 18MPA0567 0.490 (0.019) 0.988 (0.039) 1.705 (0.067) Mechanical Drawing 1.100 (0.043) 2 3 4 0.385 (0.015) 1 8 0.0 7 6 uc 0.0 (Note: Engineering designator is 18MPA0567) Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (Vd3) pr 5 Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.47 mg. Bond Pad #5 (RF Out) Bond Pad #6 (Vg3) Bond Pad #7 (Vg2) Bond Pad #8 (Vg1) e- Bias Arrangement Vd3 Bypass Capacitors - See App Note [2] 2 3 4 1 Pr 8 7 6 Vg3 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 7 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. od 0.439 (0.017) 0.589 (0.023) 1.400 (0.055) tio n 5 0.413 (0.016) 2.150 (0.085) 17.0-22.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 18MPA0567 App Note [1] Biasing - As shown in the Bias Arrangement, bias Vd3=5.0V with Id=450mA. It is also recommended to use active biasing to keep the current constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.9V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Vd3 and Vg3 require DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Tables These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature ºC ºC ºC Rth MTTF Hours uc FITs C/W C/W E+ E+ E+ E+ E+ E+ Bias Conditions: Vd1=5.0V, Id=450 mA Pr Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com e- pr Page 5 of 7 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. od C/W tio n 17.0-22.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 18MPA0567 Device Schematic Pr Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com e- pr Page 6 of 7 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. od uc tio n 17.0-22.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 18MPA0567 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 7 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. Pr Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. e- pr od ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. uc Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. tio n