CM200DY-24A

MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE CM200DY-24A ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 17 23 23 17 C2E1 E2 C1 E2 G2 4 G1 E1 4 12 2-φ6.5 MOUNTING HOLES 12 80±0.25 12 3-M5 NUTS 12.5 (SCREWING DEPTH) 20 (14) 48 13 18 4 TAB #110. t=0.5 16 7 16 7 16 7.5 E2 G2 C2E1 E2 C1 G1 E1 29 +1.0 –0.5 LABEL 21.2 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Conditions G-E Short C-E Short DC, TC = 84°C*1 Pulse Pulse TC = 25°C*1 (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Ratings 1200 ±20 200 400 200 400 1340 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A W °C °C Vrms N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*1,*2 Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. — 6 — — — — — — — — — — — — — — — — — 1.6 Limits Typ. — 7 — 2.1 2.4 — — — 1000 — — — — — 9.0 — — — 0.022 — Max. 1 8 0.5 3.0 — 35 3 0.68 — 130 100 450 350 150 — 3.8 0.093 0.17 — 21 Unit mA V µA V nF nC ns ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 400 350 300 250 200 VGE = 20V 15 13 Tj = 25°C 12 4 VGE = 15V 3 2 11 150 100 50 0 0 2 4 6 8 10 9 10 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 200 250 300 350 400 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25°C EMITTER CURRENT IE (A) 8 5 3 2 6 IC = 400A IC = 200A 2 IC = 80A 0 6 8 10 12 14 16 18 20 102 7 5 3 2 4 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies SWITCHING TIME (ns) 7 td(off) 5 tf 3 2 7 5 3 2 101 7 5 3 2 102 td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 Coes 100 7 5 3 2 101 7 5 3 2 Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c’) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC = 25°C 3 Under the chip 2 Irr trr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 23 5 7 103 10–1 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 101 1 10 2 3 5 7 102 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.093K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.17K/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) Conditions: VCC = 600V 5 VGE = ±15V 3 RG = 1.6Ω Tj = 125°C 2 Inductive load C snubber at bus 101 7 7 5 3 2 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 102 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 5 3 2 Esw(on) Esw(off) Esw(off) 101 7 5 3 2 Esw(on) 100 1 10 2 3 5 7 102 2 3 5 7 103 100 0 10 Conditions: VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) 102 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 RECOVERY LOSS (mJ/pulse) VCC = 600V 5 VGE = ±15V 3 RG = 1.6Ω Tj = 125°C 2 Inductive load C snubber at bus 101 7 5 3 2 7 Conditions: 5 3 2 Err 101 7 5 3 2 Conditions: VCC = 600V VGE = ±15V IE = 200A Tj = 125°C Inductive load C snubber at bus Err 100 1 10 2 3 5 7 102 2 3 5 7 103 100 0 10 2 3 5 7 101 2 3 5 7 102 EMITTER CURRENT IE (A) GATE RESISTANCE RG (Ω) Feb. 2009 4 MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A VCC = 400V 16 VCC = 600V 12 8 4 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) Feb. 2009 5