CM75DY-12H

MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B C F F K E2 G2 Q - DIA. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R TAB#110 t=0.5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75DY-12H is a 600V (VCES), 75 Ampere Dual IGBT Module. Type CM Current Rating Amperes 75 VCES Volts (x 50) 12 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.150±0.01 1.57 1.34 1.22 Max. 0.90 0.85 0.79 0.71 Millimeters 94.0 80.0±0.25 40.0 34.0 31.0 Max. 23.0 21.5 20.0 18.0 Dimensions K L M N P Q R S Inches 0.67 0.63 0.51 0.47 0.28 0.256 Dia. 0.16 M5 Metric Millimeters 17.0 16.0 13.0 12.0 7.0 Dia. 6.5 4.0 M5 Sep.1998 MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM75DY-12H –40 to 150 –40 to 125 600 ±20 75 150* 75 150* 310 1.47 ~ 1.96 1.96 ~ 2.94 190 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V IC = 75A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 300V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.1 2.15 225 – Max. 1.0 0.5 7.5 2.8** – – 2.8 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 75A, diE/dt = –150A/µs IE = 75A, diE/dt = –150A/µs VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.2 Max. 7.5 2.6 1.5 120 300 200 300 110 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.40 0.90 0.075 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 125 100 75 50 25 0 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C Tj = 25oC 125 100 75 VGE = 20V 15 12 4 11 3 10 2 50 9 25 0 1 7 8 0 0 25 50 75 100 125 150 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C Tj = 25°C IC = 150A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 102 101 Cies 6 IC = 75A 4 101 100 Coes 2 IC = 30A VGE = 0V Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, t rr, (ns) 103 tf td(off) 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 IC = 75A 16 SWITCHING TIME, (ns) VCC = 200V 102 td(on) 102 t rr Irr 101 12 VCC = 300V 8 101 tr VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 125°C 101 di/dt = -150A/µsec Tj = 25°C 100 4 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 100 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 50 100 150 200 250 300 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.4°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.9°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998