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ML792H32

ML792H32

  • 厂商:

    MITSUBISHI

  • 封装:

  • 描述:

    ML792H32 - 10Gbps InGaAsP DFB LASER DIODE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
ML792H32 数据手册
MITSUBISHI LASER DIODES ML7xx32 SERIES Notice: Some parametric limits are subject to change 10Gbps InGaAsP DFB LASER DIODE TYPE NAME ML792E32/ML792H32 APPLICATION 10 Gbps Ethernet/Short Reach DESCRIPTION ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm. λ / 4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation. Furthermore, ML7xx32 i s able to operate in the wide temperature range from 0 oC to 85 oC w ithout temperature control. ***S pecification Note Type ML792E32-01 M L792H32-01 M atching Resistance :Rs 4 2 ± 1 o hm FEATURES λ / 4 p hase shifted grating structure W ide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) H igh resonance frequency (typical 15GHz) C hip-on-carrier ABSOLUTE MAXIMUM RATINGS Symbol If VRL Tc Tstg P arameter Laser forward current Laser reverse voltage Operation temperature Storage temperature Conditions Ratings 1 20 2 0 ~ +85 - 40 ~+100 Unit mA V o C C o ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25 C) o Symbol Ith Iop Vop η λp SMSR θ θ⊥ fr tr tf P arameter Threshold current Operation current Operating voltage Slope efficiency P eak wavelength Side mode suppression ratio Beam divergence angle (parallel) Resonance frequency Rise time(20%-80%) Fall time(20%-80%) CW Conditions Min. 0.20 1290 35 - Limits Typ. 9 30 30 70 1.1 0.25 1310 45 25 30 15 30 30 Max . 20 40 40 90 1. 8 1330 40 45 40 40 Unit mA mA mA mA V mW/mA nm dB d eg. d eg. GHz psec CW,Tc=85 C o CW,Po=5mW CW,Po=5mW,Tc=85 oC CW,Po=5mW CW,Po=5mW CW,Po=5mW,Tc= 0 oC ~ +85 oC CW,Po=5mW,Tc= 0 oC ~ +85 oC CW,Po=5mW 10 Gbps, Ex=7dB, Vpp=2.0V 10Gbps, Ex=7dB, Vpp=2.0V 4th order Bessel - Thompson Filter (perpendicular) CW,Po=5mW MITSUBISHI ELECTRIC Mar. 2003 MITSUBISHI LASER DIODES ML7XX32 SERIES 10Gbps InGaAsP DFB-LASER DIODE OUTLINE DRAWINGS Beam Point ML792E32 (2) Rs Rs Beam Point (1) Case 2.1 ± 0.05 ML792H32 Beam Point (2) Rs Rs Rs (1) Case Beam Point 2.1 ± 0.05 MITSUBISHI ELECTRIC Mar. 2003
ML792H32 价格&库存

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