RD00HVS1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+/-0.1 1.6+/-0.1 LOT No. φ 1 0. RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. TYPE NAME 0.8 MIN 2.5+/-0.1 OUTLINE DRAWING 1.5+/-0.1 High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIANT RD00HVS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS 30 +/-10 3.1 20 200 150 -40 to +125 40 UNIT V V W mW mA °C °C °C/W Note : Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS Vth Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=5mW, f=175MHz,Idq=50mA MIN 1 0.5 50 LIMITS TYP MAX. 25 1 2 3 0.8 60 UNIT uA uA V W % Note : Above parameters , ratings , limits and conditions are subject to change. RD00HVS1 MITSUBISHI ELECTRIC 1/6 10 Jan 2006 3.9+/-0.3 FEATURES MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 Vgs-Ids CHARACTERISTICS 1.0 0.8 0.6 0.4 0.2 Ta=+25°C Vds=10V RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) 4 CHANNEL DISSIPATION Pch(W) 3 2 1 On PCB(*1) 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) On PCB(*1) with Heat-sink 0.0 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 1.5 Ta=+25°C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vds VS. Ciss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 Ta=+25°C f=1MHz 0.5 Vgs=4V Vgs=3V 0 0 2 4 6 Vds(V) 8 10 Ciss(pF) 1 Ids(A) 5 10 Vds(V) 15 20 Vds VS. Coss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 4 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS Ta=+25°C f=1MHz 3 Crss(pF) Coss(pF) 2 1 0 5 10 Vds(V) 15 20 0 5 10 Vds(V) 15 20 RD00HVS1 MITSUBISHI ELECTRIC 2/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 Pin-Po CHARACTERISTICS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A) 25 20 15 10 5 0 -15 -10 -5 0 5 Pin(dBm) 10 15 ηｄ Gp Po 100 90 Pout(W) , Idd(A) 80 ηd(%) 70 60 Ta=+25°C f=175MHz Vdd=12.5V Idq=50mA 1.2 Po 120 100 ηd 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 Pin(mW ) 15 20 Idd Ta=25°C f=175MHz Vdd=12.5V Idq=50mA 80 60 40 20 0 ηd(%) Idd(mA) 10 Jan 2006 50 40 30 Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A) 25 20 15 10 5 0 -15 -10 -5 0 5 Pin(dBm) 10 15 Ta=+25°C f=520MHz Vdd=12.5V Idq=50mA ηｄ Gp Po Pin-Po CHARACTERISTICS 100 90 Pout(W) , Idd(A) 80 ηd(%) 70 60 50 40 30 1.4 1.2 1.0 0.8 0.6 0.4 Idd ηd Po 140 120 Ta=25°C f=520MHz Vdd=12.5V Idq=50mA 100 80 60 40 20 0 ηd(%) 0.2 0.0 0 5 10 Pin(mW ) 15 20 Vdd-Po CHARACTERISTICS 1.4 1.2 1 Po(W) 0.8 Idd Ta=25°C f=175MHz Pin=5mW Idq=50mA Zg=ZI=50 ohm Po Vdd-Po CHARACTERISTICS 280 240 200 Po(W) 160 120 80 40 0 Idd(mA) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 4 6 8 10 Vdd(V) 12 14 Ta=25°C f=520MHz Pin=15mW Idq=50mA Zg=ZI=50 ohm Po 320 280 240 200 Idd 0.6 0.4 0.2 0 4 6 8 10 Vdd(V) 12 14 160 120 80 40 0 RD00HVS1 MITSUBISHI ELECTRIC 3/6 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TEST CIRCUIT(f=175MHz) Vg g Vdd C1 18.0 m m 18.0 m m C2 1 0 uF ,50V 4.7kO H M 4m m R F-in 2m m 19.5 m m L1 10pF 1 8pF 10.5m m 4 .5 m m L2 270 O H M 2 40pF L 1 : E n am e le d w ire 4 T urn s ,D :0 .4 3 m m ,2 .4 6 m m O .D L2 :L Q G 1 1 A6 8N (6 8nH ,m urata) L 3 : E n am e le d w ire 9 T urn s ,D :0 .4 3 m m ,2 .4 6 m m O .D L 4 : E n am e le d w ire 7 T urn s ,D :0 .4 3 m m ,2 .4 6 m m O .D C 1 ,C 2 :1 0 0 0 p F ,0 .0 2 2 uF in p a ralle l 4m m R D 00H V S 1 5m m L4 4m m 6.5 m m 20 .5 m m L3 3p F 15 m m 4.0 m m 180 pF 2 50pF R F -o u t 18p F N o te :B o ard m ate rial-g lass e pox i s ub s tra te M icro strip lin e w id th= 1 .0m m /50 O H M ,er:4 .8 ,t= 0 .6 m m TEST CIRCUIT(f=520MHz) Vgg Vdd C1 W 4.7kOHM 8.5mm RF-in 62pF 18pF 15pF 6.6nH 24pF 18.1nH 10pF 4mm 7.7mm 3.2mm 19mm RD00HVS1 520MHz 0.6mm 2.5mm 6mm C2 W 19mm 34.5nH 10.8nH 1.2mm 25.8mm 15mm RF-out 190pF 5pF 22pF 10pF 3pF 7pF Note: Board material- Glass epoxy copper-clad laminates FR-4 Micro strip line width=1mm,50 OHM, er:4.8, t=0.6mm C1,C2:1000pF,0.022uF in parallel W:Line width=1.0mm RD00HVS1 MITSUBISHI ELECTRIC 4/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 S12 (mag) 0.027 0.039 0.043 0.048 0.054 0.058 0.060 0.062 0.063 0.063 0.064 0.063 0.062 0.061 0.060 0.058 0.056 0.054 0.053 0.051 0.048 0.046 (ang) 66.7 56.1 50.7 45.6 37.5 30.2 23.7 18.2 13.3 8.5 4.8 1.1 -2.3 -5.4 -8.6 -11.0 -13.5 -16.2 -17.8 -20.0 -22.1 -23.5 (mag) 0.928 0.889 0.865 0.843 0.796 0.754 0.716 0.688 0.668 0.652 0.640 0.633 0.627 0.626 0.625 0.627 0.630 0.634 0.639 0.645 0.654 0.661 S22 (ang) -24.7 -36.5 -42.0 -47.2 -56.4 -64.4 -71.5 -77.6 -83.4 -88.7 -93.3 -97.9 -102.1 -105.9 -109.6 -113.4 -116.8 -120.0 -123.3 -126.4 -129.3 -132.1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 1.004 0.987 0.972 0.957 0.929 0.898 0.875 0.857 0.844 0.831 0.824 0.815 0.810 0.809 0.807 0.806 0.808 0.808 0.810 0.811 0.814 0.817 (ang) -35.2 -51.9 -59.7 -67.1 -80.1 -91.5 -101.4 -110.0 -117.3 -124.1 -130.0 -135.0 -139.9 -144.1 -148.1 -151.8 -155.1 -158.0 -161.1 -163.9 -166.5 -168.9 S21 (mag) (ang) 13.480 158.7 12.911 147.1 12.500 141.6 12.035 136.2 11.030 126.6 10.055 118.7 9.157 111.3 8.322 104.9 7.642 99.3 6.991 93.9 6.432 89.5 5.963 84.9 5.480 80.7 5.103 77.0 4.769 73.1 4.420 69.9 4.161 66.8 3.900 63.1 3.639 60.3 3.466 57.7 3.254 54.1 3.045 51.9 RD00HVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 1.005 0.995 0.980 0.967 0.943 0.916 0.891 0.877 0.862 0.852 0.844 0.835 0.828 0.824 0.823 0.820 0.821 0.822 0.823 0.822 0.826 0.828 (ang) -33.4 -49.7 -57.5 -64.6 -77.5 -88.9 -98.7 -107.6 -115.0 -121.9 -128.1 -133.3 -138.3 -142.7 -146.8 -150.6 -153.9 -157.2 -160.2 -163.1 -165.9 -168.4 S21 (mag) (ang) 13.343 160.0 12.874 149.0 12.525 143.6 12.108 138.3 11.193 129.0 10.249 121.2 9.403 113.9 8.582 107.3 7.916 101.9 7.273 96.4 6.706 91.9 6.224 87.3 5.755 83.0 5.358 79.3 5.024 75.4 4.671 72.0 4.398 68.9 4.134 65.2 3.853 62.3 3.677 59.7 3.459 56.3 3.241 53.9 S12 (mag) 0.024 0.034 0.038 0.042 0.047 0.052 0.054 0.056 0.057 0.057 0.057 0.058 0.056 0.056 0.054 0.053 0.051 0.050 0.048 0.047 0.044 0.042 (ang) 68.3 57.9 53.2 47.8 39.3 32.3 26.2 20.6 15.7 11.2 7.5 3.4 0.2 -2.5 -5.8 -8.4 -10.5 -13.3 -15.2 -17.2 -19.5 -20.2 (mag) 0.898 0.865 0.845 0.826 0.781 0.743 0.709 0.681 0.661 0.644 0.633 0.625 0.619 0.618 0.616 0.615 0.618 0.622 0.628 0.633 0.640 0.646 S22 (ang) -22.6 -33.1 -38.0 -42.9 -51.3 -58.9 -65.6 -71.5 -77.0 -82.0 -86.6 -91.2 -95.2 -99.0 -102.9 -106.6 -110.1 -113.2 -116.5 -119.8 -122.9 -125.7 RD00HVS1 MITSUBISHI ELECTRIC 5/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD00HVS1 MITSUBISHI ELECTRIC 6/6 10 Jan 2006