MRF9135L

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9135L/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical N–CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 25 Watts Avg. Power Gain — 17.8 dB Efficiency — 25% Adjacent Channel Power — 750 kHz: –47 dBc @ 30 kHz BW • Internally Matched, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. MRF9135L MRF9135LR3 MRF9135LSR3 880 MHz, 135 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF9135L CASE 465A–06, STYLE 1 NI–780S MRF9135LSR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC > = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.5 298 1.7 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M2 (Minimum) C7 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF9135L MRF9135LR3 MRF9135LSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 450 µA) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 1100 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 9 Adc) DYNAMIC CHARACTERISTICS Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss Crss — — 109 4.4 — — pF pF VGS(th) VGS(Q) VDS(on) gfs 2 3 — — 2.8 3.7 0.19 12 4 5 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture) Single–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carrier, Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA, f = 880.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA, f = 880.0 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA, f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA, f = 880.0 MHz) Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 135 W CW, IDQ = 1100 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps 16 17.8 — dB η 22 25 — % ACPR — –47 –45 dBc IRL — –13.5 –9 dB Gps — 17 — dB η — 24 — % ACPR — –46 — dBc IRL — –12.5 — dB Ψ No Degradation In Output Power MRF9135L MRF9135LR3 MRF9135LSR3 2 MOTOROLA RF DEVICE DATA + VGG B2 + C9 RF INPUT C8 C7 L1 C10 Z11 L2 C11 Z12 Z13 Z14 C18 B1 C19 + + C23 + VDD C20 C21 C22 RF OUTPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C5 Z9 Z10 Z15 Z16 Z17 Z18 C17 Z19 DUT C2 C3 C4 C6 C12 C13 C14 C15 C16 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 0.430″ x 0.080″ Microstrip 0.430″ x 0.080″ Microstrip 0.800″ x 0.080″ Microstrip 0.200″ x 0.220″ Microstrip 0.110″ x 0.220″ Microstrip 0.175″ x 0.220″ Microstrip 0.200″ x 0.220″ x 0.630″ Taper 0.250″ x 0.630″ Microstrip 0.050″ x 0.630″ Microstrip 0.050″ x 0.630″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 0.105″ x 0.630″ Microstrip 0.145″ x 0.630″ Microstrip 0.200″ x 0.630″ x 0.220″ Taper 0.180″ x 0.220″ Microstrip 0.110″ x 0.220″ Microstrip 0.200″ x 0.220″ Microstrip 0.900″ x 0.080″ Microstrip 0.360″ x 0.080″ Microstrip 0.410″ x 0.080″ Microstrip Figure 1. 880 MHz Test Circuit Schematic Table 1. 880 MHz Test Circuit Component Designations and Values Part B1, B2 C1, C7, C17, C18 C2, C16 C3 C4, C15 C5, C6 C8 C9, C20, C21, C22 C10, C11, C12, C13 C14 C19 C23 L1, L2 WB1, WB2 PCB Bedstead Board Material Description Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, B Case 0.6–4.5 Gigatrim Variable Capacitors 8.2 pF Chip Capacitor, B Case 0.8–8.0 Gigatrim Variable Capacitors 12 pF Chip Capacitors, B Case 20K pF Chip Capacitor, B Case 10 µF, 35 V Tantulum Capacitors 7.5 pF Chip Capacitors, B Case 11 pF Chip Capacitor, B Case 0.56 µF, 50 V Chip Capacitor 470 µF Electrolytic Capacitor 12.5 nH Coilcraft inductors 10 mil Brass Shim (0.205 x 0.530) Etched Circuit Board Circuit Bedstead 30 mil Glass Teflon, εr = 2.55, 2 oz Cu Value, P/N or DWG 95F786 100B470JP 500X 44F3360 100B8R2BP 500X 44F3360 100B120JP 500X 200B203MP50X 93F2975 100B7R5JP 500X 100B110JP 500X C1825C564K5RA7800 14F185 A04T–5 RF–Design Lab 900 MHz 4X6 Cobra Rev 02 DWG #990528JAM2 GX–0300–55–22 Manufacturer Newark ATC Newark ATC Newark ATC ATC Newark ATC ATC Kemet Newark Coilcraft RF–Design Lab CMR RF–Design Lab Arlon MOTOROLA RF DEVICE DATA MRF9135L MRF9135LR3 MRF9135LSR3 3 C23 C9 B1 C8 C20 C21 C22 B2 C7 L1 WB1 WB2 C14 C2 C3 C4 C6 CUT OUT AREA C12 C13 C15 C16 C17 C5 C10 C11 C18 L2 C19 C1 MRF9135L 900 MHz Rev-02 Figure 2. 880 MHz Test Circuit Component Layout MRF9135L MRF9135LR3 MRF9135LSR3 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 19 18 G ps , POWER GAIN (dB) 17 16 15 14 13 12 11 860 IRL ACPR Gps η VDD = 26 Vdc Pout = 25 W (Avg.) IDQ = 1100 mA N-CDMA IS-95 Pilot, Sync, Paging Traffic Codes 8 through 13 35 30 25 20 -20 ACPR (dBc) -30 -40 -50 875 880 885 890 895 -60 900 h , DRAIN EFFICIENCY (%) -10 -12 -14 -16 -18 865 870 f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance 19 18.5 G ps , POWER GAIN (dB) 18 17.5 17 16.5 16 15.5 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 IDQ = 1650 mA 1320 mA 1100 mA 880 mA VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz IMD, INTERMODULATION DISTORTION (dBc) -20 VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz -30 -40 IDQ = 880 mA 1650 mA -50 IRL, INPUT RETURN LOSS (dB) 1320 mA 1100 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 20 50 40 30 20 VDD = 26 Vdc IDQ = 1100 mA f1 = 880 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 -70 -80 1 3rd Order 5th Order 7th Order VDD = 26 Vdc IDQ = 1100 mA f1 = 880 MHz, f2 = 880.1 MHz 16 14 12 η 10 10 0 10 Pout, OUTPUT POWER (WATTS) PEP 100 1 Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA MRF9135L MRF9135LR3 MRF9135LSR3 5 η, DRAIN EFFICIENCY (%) 18 G ps , POWER GAIN (dB) Gps 18 G ps , POWER GAIN (dB) 16 20 η 0 -20 -40 -60 14 12 10 8 VDD = 26 Vdc IDQ = 1100 mA f1 = 880 MHz, f2 = 880.1 MHz IMD 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency and IMD versus Output Power 20 18 G ps , POWER GAIN (dB) 16 14 12 10 8 6 1 ACPR 750 kHz ALT 1.98 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. Gps 60 40 20 VDD = 26 Vdc, IDQ = 1100 mA f = 880 MHz N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 through 13 0 -20 -40 -60 -80 η, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) η Figure 9. N–CDMA Performance Output Power versus Gain, ACPR, Efficiency 4.8 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -95.2 -2.5 -ALT @ 30 kHz BW -ACP @ 30 kHz BW 1.23 MHz BW +ACP @ 30 kHz BW +ALT @ 30 kHz BW -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 f, FREQUENCY (MHz) Figure 10. Typical CDMA Spectrum MRF9135L MRF9135LR3 MRF9135LSR3 6 η, DRAIN EFFICIENCY (%) Gps 40 MOTOROLA RF DEVICE DATA IMD, INTERMODULATION DISTORTION (dBc) 20 60 f = 865 MHz ZOL* f = 895 MHz Zo = 2 Ω f = 865 MHz Zin f = 895 MHz VDD = 26 V, IDQ =1100 mA, Pout = 25 W Avg. f MHz 865 880 895 Zin Zin Ω 1.15 – j0.3 1.25 – j0.5 1.35 – j0.75 ZOL* Ω 1.17 + j0.24 1.22 + j0.1 1.32 + j0.07 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF9135L MRF9135LR3 MRF9135LSR3 7 NOTES MRF9135L MRF9135LR3 MRF9135LSR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF9135L MRF9135LR3 MRF9135LSR3 9 NOTES MRF9135L MRF9135LR3 MRF9135LSR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 B (FLANGE) 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H C (LID) M TA TA B B M ccc aaa M TA TA M B B M S M M M M M (INSULATOR) M ccc F E A A (FLANGE) T SEATING PLANE CASE 465–06 ISSUE F NI–780 MRF9135L 4X U (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B 1 4X Z (LID) B (FLANGE) 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F E A A (FLANGE) T SEATING PLANE CASE 465A–06 ISSUE F NI–780S MRF9135LSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MOTOROLA RF DEVICE DATA MRF9135L MRF9135LR3 MRF9135LSR3 11 Motorola reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9135L MRF9135LR3 MRF9135LSR3 ◊ 12 MOTOROLA RF DEVICE DATA MRF9135L/D